High-field magnetization of Dy2O3

The magnetization of powdered samples of Dy2O3 has been measured at temperatures between 1.45 deg and 4.2 K, in applied magnetic fields ranging to 7 Teslas. A linear dependence of magnetization on applied field is observable in high field region, the slope of which is independent of temperature over the range investigated. The extrapolated saturation magnetic moment is 2.77 + or - 0.08 Bohr magnetons per ion

Space solar cell research: Problems and potential

The value of a passive, maintenance-free, renewable energy source was apparent in the early days of the space program, and the silicon solar cell was pressed into service. Efficiencies of those early space solar arrays were low, and lifetimes shorter than hoped for, but within a decade significant advances had been made in both areas. Better performance was achieved through improvements in silicon single crystal material, better device designs, and a better understanding of the factors that affect the performance of a solar cell in space. Chief among the latter, particularly for the mid-to-high altitude (HEO) and geosynchronous (GEO) orbits, are the effects of the naturally occurring particulate radiation environment. Although not as broadly important to the photovoltaic community at large as increased efficiency, the topic of radiation damage is critically important to use of solar cells in space, and is a major component of the NASA research program in space photovoltaics. A brief overview of some of the opportunities and challenges for space photovoltaic applications is given, and some of the current research directed at achieving high efficiency and controlling radiation damage in space solar cells is discussed

Magnetization and magnetic susceptibility of DyH3

The magnetization and differential magnetic susceptibility of powdered samples of DyH3 have been measured at 4.2 K in applied magnetic fields ranging to 9 Teslas. The differential magnetic susceptibility has also been studied in zero applied field as a function of temperature. The magnetization data are described by an equation of the form M = aB/(1 + bB + cB. The ratio a/b is a measure of the saturation magnetization and gives an effective moment of 5.12 Bohr magnetons per ion. The zero field susceptibility exhibits a maximum at T = 3.45 K, and an inflection point near 2.85 K. The susceptibility at 4.2 K has a 1/B squared dependence on the applied magnetic field for B approximately greater than 0.3 Teslas

Potential high efficiency solar cells: Applications from space photovoltaic research

NASA involvement in photovoltaic energy conversion research development and applications spans over two decades of continuous progress. Solar cell research and development programs conducted by the Lewis Research Center's Photovoltaic Branch have produced a sound technology base not only for the space program, but for terrestrial applications as well. The fundamental goals which have guided the NASA photovoltaic program are to improve the efficiency and lifetime, and to reduce the mass and cost of photovoltaic energy conversion devices and arrays for use in space. The major efforts in the current Lewis program are on high efficiency, single crystal GaAs planar and concentrator cells, radiation hard InP cells, and superlattice solar cells. A brief historical perspective of accomplishments in high efficiency space solar cells will be given, and current work in all of the above categories will be described. The applicability of space cell research and technology to terrestrial photovoltaics will be discussed

Magnetic properties of Dy2Ti2O7

Measurements were made of the magnetization, differential magnetic susceptibility, and magnetic entropy of powered samples of Dy2Ti2O7. The saturation magnetic moment is 4.7 + or - 0.2 Bohr magnetons per Dy ion, instead of 10 as predicted by Hund's rules. A temperature-independent magnetization is observed in the saturation region. Absolute values of magnetic entropy have been obtained for temperatures from 1.25 to 20 K, in applied fields up to 10.4 tesla. The magnetic entropy approaches a maximum value consistent with a ground-state multiplicity of 2. Low field magnetization and differential susceptibility data show a transition to antiferromagnetism near 1.35 K. A construction of the magnetic specific heat from the zero field entropy shows an anomaly near the same temperature

Suitability of the rare-earth compounds Dy2Ti2O7 and Gd3Al5O12 for low temperature (4K-20K) magnetic refrigeration cycle

Measurements were made of the magnetic entropy and magnetization of powered samples of the compounds Dy2Ti2O7 and Gd3Al5O12. The magnetization was measured for temperatures at and below 4.2 K, in applied fields ranging to 7.0 tesla. Isothermal changes in magnetic entropy were measured for temperatures from 1.2 to 20 K, in applied fields up to 10 tesla. The results of the measurements are consistent with a doublet ground state for Dy2Ti2O7, and an eight-fold degenerate ground state for Gd3Al5O12. Absolute values of magnetic entropy have been obtained at the lower temperatures, permitting the isotherms to be properly located in the S-H plane with the use of adiabatic magnetization data. The iso-field lines in the S-T plane were determined. The results indicate that Dy2Ti2O7 can absorb a maximum of 71 + or - 4 joules/kg of heat at 4.2 K, while Gd3Al5O12 can absorb 233 + or - joules/kg at the same temperature. The large difference between the two is most likely a result of crystal field interactions in the dysoprosium compound. Both materials can be cycled adiabatically between 4.2 and 20 K

GaAs and 3-5 compound solar cells status and prospects for use in space

Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types

Estimation of minority carrier diffusion lengths in InP/GaAs solar cells

Minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. An attempt is made to estimate the minority carrier diffusion lengths is the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the experimental cell results measured at NASA Lewis under AMO (air mass zero) spectrum at 25 C. A 16 nm hole diffusion length in the emitter and a 0.42 micron electron diffusion length in the base gave very good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short current, open circuit voltage, and efficiency was studied. It is also observed that the front surface recombination velocity has very little influence on the cell performance. The poor output of heteroepitaxial cells is caused primarily by the large number of dislocations generated at the interfaces that propagate through the bulk indium phosphide layers. Cell efficiency as a function of dislocation density was calculated and the effect of improved emitter bulk properties on cell efficiency is presented. It is found that cells with over 16 percent efficiencies should be possible, provided the dislocation density is below 10(exp 6)/sq cm

Comparative modeling of InP solar cell structures

The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed

Proton radiation damage in bulk n-GaAs

Bulk samples of Te-doped n-type GaAs were irradiated using 10 MeV to 24 MeV protons to fluences between 2 x 10 to the 11th power protons/sq cm and 2 x 10 to the 14th power protons/sq cm. Majority carrier electrical effects were measured using the vanderPauw techniques and it was observed that radiation damage was minimal at the 10 to the 11th power proton/sq cm fluence. For the higher fluences, carrier removal was proportional to Delta E/Delta x for the protons indicating ionization interactions between the protons and atoms. Thermal annealing was observed at 155 C