Silicon-based three-dimensional microstructures for radiation dosimetry in hadrontherapy

In this work, we propose a solid-state-detector for use in radiation microdosimetry. This device improves the performance of existing dosimeters using customized 3D-cylindrical microstructures etched inside silicon. The microdosimeter consists of an array of micro-sensors that have 3D-cylindrical electrodes of 15 μm diameter and a depth of 5 μm within a silicon membrane, resulting in a well-defined micrometric radiation sensitive volume. These microdetectors have been characterized using an 241Am source to assess their performance as radiation detectors in a high-LET environment. This letter demonstrates the capability of this microdetector to be used to measure dose and LET in hadrontherapy centers for treatment plan verification as part of their patient-specific quality control program

Analysis of edge and surface TCTs for irradiated 3D silicon strip detectors

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Magnetoelectric Coupling in epsilon-Fe2O3

Nanoparticles of the ferrimagnetic epsilon-Fe2O3 oxide have been synthesized by sol-gel method. Here, we report on the measurements of the dielectric permittivity as a function of temperature, frequency and magnetic field. It is found that, coinciding with the transition from collinear ferrimagnetic ordering to an incommensurate magnetic state occurring at about 100 K, there is an abrupt change (about 30 %) of permittivity suggesting the existence of a magnetoelectric coupling in this material. Indeed, magnetic field dependent measurements at 100 K have revealed an increase of the permittivity by about 0.3 % in 6 T. Prospective advantages of epsilon-Fe2O3 as multiferroic material are discussed.Comment: 17 pages, 4 figures, submitted to Nanotechnolog

Mapping The In-Plane Electric Field Inside Irradiated Diodes

A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.61015neq/cm2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 23m2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas

Prototyping of petalets for the Phase-II Upgrade of the silicon strip tracking detector of the ATLAS Experiment

In the high luminosity era of the Large Hadron Collider, the HL-LHC, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.Comment: 22 pages for submission for Journal of Instrumentatio

Mapping the depleted area of silicon diodes using a micro-focused X-ray beam

For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -500 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ·cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.Individual authors1 were supported in part by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The work at SCIPP4 was supported by the Department of Energy, grant DE-SC0010107. This work5 issupported and financed in part by the Spanish Ministry of Science, Innovation and Universities through the Particle Physics National Program, ref. FPA2015-65652-C4-4-R (MICINN/FEDER, UE), and co-financed with FEDER funds

Measurements with Irradiated 3D Silicon Strip Detectors

For the unprecedentedly high radiation level at the sLHC, the luminosity upgrade of the LHC, new tracking detectors are investigated. Among different approaches, silicon detectors in 3D technology constitute a promising option. Columnar electrodes are etched into the substrate, therefore the distance for charge collection and depletion is decoupled from the detector thickness. Thus, two of the detrimental effects caused by radiation in silicon (increased depletion voltage and charge carrier trapping) can be reduced. Results of measurements with irradiated 3D silicon strip detectors produced by IMB-CNM are presented

Precision scans of the pixel cell response of double sided 3D pixel detectors to pion and x-ray beams

hree-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55μm pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0±0.5% is measured. After a 10o rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises to 99.8±0.5%. The double-sided 3D sensor shows significantly reduced charge sharing to neighbouring pixels compared to the planar device. The charge sharing results obtained from the X-ray beam study of the 3D sensor are shown to agree with a simple simulation in which charge diffusion is neglected. The devices tested are found to be compatible with having a region in which no charge is collected centred on the electrode columns and of radius 7.6±0.6μm. Charge collection above and below the columnar electrodes in the double-sided 3D sensor is observed