Fast Flux-Activated Leakage Reduction for Superconducting Quantum Circuits

Quantum computers will require quantum error correction to reach the low error rates necessary for solving problems that surpass the capabilities of conventional computers. One of the dominant errors limiting the performance of quantum error correction codes across multiple technology platforms is leakage out of the computational subspace arising from the multi-level structure of qubit implementations. Here, we present a resource-efficient universal leakage reduction unit for superconducting qubits using parametric flux modulation. This operation removes leakage down to our measurement accuracy of $7\cdot 10^{-4}$ in approximately $50\, \mathrm{ns}$ with a low error of $2.5(1)\cdot 10^{-3}$ on the computational subspace, thereby reaching durations and fidelities comparable to those of single-qubit gates. We demonstrate that using the leakage reduction unit in repeated weight-two stabilizer measurements reduces the total number of detected errors in a scalable fashion to close to what can be achieved using leakage-rejection methods which do not scale. Our approach does neither require additional control electronics nor on-chip components and is applicable to both auxiliary and data qubits. These benefits make our method particularly attractive for mitigating leakage in large-scale quantum error correction circuits, a crucial requirement for the practical implementation of fault-tolerant quantum computation

Calibration of Drive Non-Linearity for Arbitrary-Angle Single-Qubit Gates Using Error Amplification

The ability to execute high-fidelity operations is crucial to scaling up quantum devices to large numbers of qubits. However, signal distortions originating from non-linear components in the control lines can limit the performance of single-qubit gates. In this work, we use a measurement based on error amplification to characterize and correct the small single-qubit rotation errors originating from the non-linear scaling of the qubit drive rate with the amplitude of the programmed pulse. With our hardware, and for a 15-ns pulse, the rotation angles deviate by up to several degrees from a linear model. Using purity benchmarking, we find that control errors reach $2\times 10^{-4}$, which accounts for half of the total gate error. Using cross-entropy benchmarking, we demonstrate arbitrary-angle single-qubit gates with coherence-limited errors of $2\times 10^{-4}$ and leakage below $6\times 10^{-5}$. While the exact magnitude of these errors is specific to our setup, the presented method is applicable to any source of non-linearity. Our work shows that the non-linearity of qubit drive line components imposes a limit on the fidelity of single-qubit gates, independent of improvements in coherence times, circuit design, or leakage mitigation when not corrected for

Optimized graphene electrodes for contacting graphene nanoribbons

Atomically precise graphene nanoribbons (GNRs) are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.QN/van der Zant La

Calibration of Drive Nonlinearity for Arbitrary-Angle Single-Qubit Gates Using Error Amplification

The ability to execute high-fidelity operations is crucial to scaling up quantum devices to large numbers of qubits. However, signal distortions originating from nonlinear components in the control lines can limit the performance of single-qubit gates. In this work, we use a measurement based on error amplification to characterize and correct the small single-qubit rotation errors originating from the nonlinear scaling of the qubit drive rate with the amplitude of the programmed pulse. With our hardware, and for a 15-ns pulse, the rotation angles deviate by up to several degrees from a linear model. Using purity benchmarking, we find that control errors reach 2×10-4, which accounts for half of the total gate error. Using cross-entropy benchmarking, we demonstrate arbitrary-angle single-qubit gates with coherence-limited errors of 2×10-4 and leakage below 6×10-5. While the exact magnitude of these errors is specific to our setup, the presented method is applicable to most sources of nonlinearity. Our work shows that the nonlinearity of qubit drive line components imposes a limit on the fidelity of single-qubit gates, independent of improvements in coherence times, circuit design, or leakage mitigation when not corrected for.ISSN:2331-701

Optimized graphene electrodes for contacting graphene nanoribbons

Atomically precise graphene nanoribbons (GNRs) are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes