103 research outputs found

    Two-Component Scaling near the Metal-Insulator Bifurcation in Two-Dimensions

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    We consider a two-component scaling picture for the resistivity of two-dimensional (2D) weakly disordered interacting electron systems at low temperature with the aim of describing both the vicinity of the bifurcation and the low resistance metallic regime in the same framework. We contrast the essential features of one-component and two-component scaling theories. We discuss why the conventional lowest order renormalization group equations do not show a bifurcation in 2D, and a semi-empirical extension is proposed which does lead to bifurcation. Parameters, including the product zνz\nu, are determined by least squares fitting to experimental data. An excellent description is obtained for the temperature and density dependence of the resistance of silicon close to the separatrix. Implications of this two-component scaling picture for a quantum critical point are discussed.Comment: 7 pages, 1 figur

    Exact analytical expression for magnetoresistance using quantum groups

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    We obtain an exact analytical expression for magnetoresistance using noncommutative geometry and quantum groups.Then we will show that there is a deep relationship between magnetoresistance and the quantum group suq(2)su_{q}(2), from which we understand the quantum interpretation of the quantum corrections to the conductivity.Comment: 8 pages, 3 figures, replaced with the version published in Physics Letters

    Sharp increase of the effective mass near the critical density in a metallic 2D electron system

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    We find that at intermediate temperatures, the metallic temperature dependence of the conductivity \sigma(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope d\sigma/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Unexpectedly, it is found to originate from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon

    Interaction Corrections to Two-Dimensional Hole Transport in Large rsr_{s} Limit

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    The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large rsr_{s} is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter F0σF_{0}^{\sigma} determined from the experiment, however, decreases with increasing rsr_{s} for r_{s}\agt22, a behavior unexpected from existing theoretical calculations valid for small rsr_{s}.Comment: 6 pages, 4 figure

    Negatively Charged Excitons and Photoluminescence in Asymmetric Quantum Well

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    We study photoluminescence (PL) of charged excitons (XX^-) in narrow asymmetric quantum wells in high magnetic fields B. The binding of all XX^- states strongly depends on the separation δ\delta of electron and hole layers. The most sensitive is the ``bright'' singlet, whose binding energy decreases quickly with increasing δ\delta even at relatively small B. As a result, the value of B at which the singlet--triplet crossing occurs in the XX^- spectrum also depends on δ\delta and decreases from 35 T in a symmetric 10 nm GaAs well to 16 T for δ=0.5\delta=0.5 nm. Since the critical values of δ\delta at which different XX^- states unbind are surprisingly small compared to the well width, the observation of strongly bound XX^- states in an experimental PL spectrum implies virtually no layer displacement in the sample. This casts doubt on the interpretation of PL spectra of heterojunctions in terms of XX^- recombination

    Coulomb effects in granular materials at not very low temperatures

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    We consider effects of Coulomb interaction in a granular normal metal at not very low temperatures suppressing weak localization effects. In this limit calculations with the initial electron Hamiltonian are reduced to integrations over a phase variable with an effective action, which can be considered as a bosonization for the granular metal. Conditions of the applicability of the effective action are considered in detail and importance of winding numbers for the phase variables is emphasized. Explicit calculations are carried out for the conductivity and the tunneling density of states in the limits of large g1g\gg 1 and small g1g\ll 1 tunnelling conductances. It is demonstrated for any dimension of the array of the grains that at small gg the conductivity and the tunnelling density of states decay with temperature exponentially. At large gg the conductivity also decays with decreasing the temparature and its temperature dependence is logarithmic independent of dimensionality and presence of a magnetic field. The tunnelling density of states for g1g\gg 1 is anomalous in any dimension but the anomaly is stronger than logarithmic in low dimensions and is similar to that for disordered systems. The formulae derived are compared with existing experiments. The logarithmic behavior of the conductivity at large gg obtained in our model can explain numerous experiments on systems with a granular structure including some high TcT_{c} materials.Comment: 30 page

    Emergence of quasi-metallic state in disordered 2D electron gas due to strong interactions

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    The interrelation between disorder and interactions in two dimensional electron liquid is studied beyond weak coupling perturbation theory. Strong repulsion significantly reduces the electronic density of states on the Fermi level. This makes the electron liquid more rigid and strongly suppresses elastic scattering off impurities. As a result the weak localization, although ultimately present at zero temperature and infinite sample size, is unobservable at experimentally accessible temperature at high enough densities. Therefore practically there exists a well defined metallic state. We study diffusion of electrons in this state and find that the diffusion pole is significantly modified due to "mixture" with static photons similar to the Anderson - Higgs mechanism in superconductivity. As a result several effects stemming from the long range nature of diffusion like the Aronov - Altshuler logarithmic corrections to conductivity are less pronounced.Comment: to appear in Phys. Rev.

    Binding Energy of Charged Excitons in ZnSe-based Quantum Wells

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    Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29 A. The binding energies of X+ are about 25% smaller than the binding energy in the same structures. The magnetic field behavior of and X+ binding energies differ qualitatively. With growing magnetic field strength, increases its binding energy by 35-150%, while for X+ it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed

    The Parallel Magnetoconductance of Interacting Electrons in a Two Dimensional Disordered System

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    The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the electrons, while long-range interactions enhance localization. On careful examination of the transport properties, we reach the conclusion that it does not show a two dimensional metal insulator transition driven by interactions. A parallel magnetic field leads to enhanced resistivity, which saturates once the electrons become fully spin polarized. The strength of the magnetic field for which the resistivity saturates decreases as electron density goes down. Thus, the numerical calculations capture some of the features seen in recent experimental measurements of parallel magnetoconductance.Comment: 10 pages, 6 figure
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