Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high depositionpressure (>4 mbar), high plasma power and low substrate temperature (7 (U cm)1) andhigh optical band gap (>1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanismshould proceed through a sub-surface layer mechanism that leads to silicon crystallization.The obtained films are very good candidates for application in amorphous and nanocrystalline siliconsolar cells as a p-type window layer.Peer reviewe

Hydrogenated amorphous and nanocrystalline silicon solar cells deposited by HWCVD and RF-PECVD on plastic substrates at 150 °C

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