Разработка метода темплатного синтеза наноструктур в алюмооксидных матрицах

Объектом исследования является разработка метода темплатного синтеза наноструктур в алюмооксидных матрицах. Цель работы являются синтез матрицы АОА методом двухступенчатого анодирования и разработка методики темплатного синтеза металлических наноструктур в матрице АОА. Область применения: мембранные технологии, оптика, микроэлектронные устройства, матрицы для темплатного синтеза. В будущем планируется проведение исследования нанокомпозитов на основе кобальта, полученных в матрице АОА, изучение режима формирования наноструктуры и применения таких материалов.The object of research is the development of a template synthesis method for nanostructures in alumina matrices. The aim of the work is the synthesis of the AOA matrix by the method of two-stage anodization and the development of a template synthesis technique for metal nanostructures in the AOA matrix. Scope: membrane technologies, optics, microelectronic devices, matrices for template synthesis. In the future, it is planned to conduct research on cobalt-based nanocomposites obtained in the AOA matrix, to study the regime of nanostructure formation and the use of such materials.In the future, it is planned to conduct research on cobalt-base

Hybrid integration of III/V lasers on a silicon-on-insulator (SOI) optical board

Abstract: Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed siliconon-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This "cold bonding" method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers. K. Mayora, "Novel three-dimensional embedded SU-8 microchannels fabricated using a low temperature full wafer adhesive bonding," J. Micromech. Microeng. 14(7), 1047-1056 (200

Endpoint detection for CH4/H2 reactive ion etching of InGaAsP heterostructures by mass spectrometry

Mass spectrometry has been shown to be a suitable tool for endpoint detection during etching of InGaAsP heterostructures in a reactive plasma of CH4/H2. Among the volatile etching products PH4+ can be detected with the highest sensitivity and discrimination. A depth resolution of 5 nm could be obtained

Monolithic mode-locked laser on GaInAsP/InP for 160 Gb/s TDM

Mode-locked laser OEICs on GaInAsP/InP for 160 Gb/s application in hybrid mode-locking operation are demonstrated with 40 GHz repetition rate, 2.4 ps pulse length, 230 fs timing jitter, and >1 mW fiber coupled power

Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs

Polarization diversity heterodyne receiver PICs including a tunable 4-section DBR laser as a local oscillator have been successfully fabricated for the first time. PIC design and fabrication are described and characteristics of the integrated laser components are presented