Endpoint detection for CH4/H2 reactive ion etching of InGaAsP heterostructures by mass spectrometry
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Abstract
Mass spectrometry has been shown to be a suitable tool for endpoint detection during etching of InGaAsP heterostructures in a reactive plasma of CH4/H2. Among the volatile etching products PH4+ can be detected with the highest sensitivity and discrimination. A depth resolution of 5 nm could be obtained