Josephson oscillation linewidth of ion-irradiated YBa2_2Cu3_3O7_7 junctions

We report on the noise properties of ion-irradiated YBa$_2$Cu$_3$O$_7$ Josephson junctions. This work aims at investigating the linewidth of the Josephson oscillation with a detector response experiment at $\simeq$132 GHz. Experimental results are compared with a simple analytical model based on the Likharev-Semenov equation and the de Gennes dirty limit approximation. We show that the main source of low-frequency fluctuations in these junctions is the broadband Johnson noise and that the excess ($\frac{1}{f}$) noise contribution does not prevail in the temperature range of interest, as reported in some other types of high-T$_c$ superconducting Josephson junctions. Finally, we discuss the interest of ion-irradiated junctions to implement frequency-tunable oscillators consisting of synchronized arrays of Josephson junctions

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of diodes. Out of equilibrium methods such as ion implantation are expected to dope ZnO successfully provided that the non-radiative defects introduced by implantation can be annealed out. In this study, ZnO substrates are implanted with nitrogen ions, and the extended defects induced by implantation are studied by transmission electron microscopy and X-ray diffraction (XRD), before and after annealing at 900^{\circ}C. Before annealing, these defects are identified to be dislocation loops lying either in basal planes in high N concentration regions, or in prismatic planes in low N concentration regions, together with linear dislocations. An uniaxial deformation of 0.4% along the c axis, caused by the predominant basal loops, is measured by XRD in the implanted layer. After annealing, prismatic loops disappear while the density of basal loops decreases and their diameter increases. Moreover, dislocation loops disappear completely from the sub-surface region. XRD measurements show a residual deformation of only 0.05% in the implanted and annealed layer. The fact that basal loops are favoured against prismatic ones at high N concentration or high temperature is attributed to a lower stacking fault energy in these conditions. The coalescence of loops and their disappearance in the sub-surface region are ascribed to point defect diffusion. Finally, the electrical and optical properties of nitrogen-implanted ZnO are correlated with the observed structural features.Comment: 8 page

Conserved spin and orbital phase along carbon nanotubes connected with multiple ferromagnetic contacts

We report on spin dependent transport measurements in carbon nanotubes based multi-terminal circuits. We observe a gate-controlled spin signal in non-local voltages and an anomalous conductance spin signal, which reveal that both the spin and the orbital phase can be conserved along carbon nanotubes with multiple ferromagnetic contacts. This paves the way for spintronics devices exploiting both these quantum mechanical degrees of freedom on the same footing.Comment: 8 pages - minor differences with published versio

Competition between electron pairing and phase coherence in superconducting interfaces

In LaAlO3/SrTiO3 heterostructures, a gate tunable superconducting electron gas is confined in a quantum well at the interface between two insulating oxides. Remarkably, the gas coexists with both magnetism and strong Rashba spin–orbit coupling. However, both the origin of superconductivity and the nature of the transition to the normal state over the whole doping range remain elusive. Here we use resonant microwave transport to extract the superfluid stiffness and the superconducting gap energy of the LaAlO3/SrTiO3 interface as a function of carrier density. We show that the superconducting phase diagram of this system is controlled by the competition between electron pairing and phase coherence. The analysis of the superfluid density reveals that only a very small fraction of the electrons condenses into the superconducting state. We propose that this corresponds to the weak filling of high- energy dxz/dyz bands in the quantum well, more apt to host superconductivity

A stochastic network with mobile users in heavy traffic

We consider a stochastic network with mobile users in a heavy-traffic regime. We derive the scaling limit of the multi-dimensional queue length process and prove a form of spatial state space collapse. The proof exploits a recent result by Lambert and Simatos which provides a general principle to establish scaling limits of regenerative processes based on the convergence of their excursions. We also prove weak convergence of the sequences of stationary joint queue length distributions and stationary sojourn times.Comment: Final version accepted for publication in Queueing Systems, Theory and Application

Noisy Kondo impurities

The anti-ferromagnetic coupling of a magnetic impurity carrying a spin with the conduction electrons spins of a host metal is the basic mechanism responsible for the increase of the resistance of an alloy such as Cu${}_{0.998}$Fe${}_{0.002}$ at low temperature, as originally suggested by Kondo . This coupling has emerged as a very generic property of localized electronic states coupled to a continuum . The possibility to design artificial controllable magnetic impurities in nanoscopic conductors has opened a path to study this many body phenomenon in unusual situations as compared to the initial one and, in particular, in out of equilibrium situations. So far, measurements have focused on the average current. Here, we report on \textit{current fluctuations} (noise) measurements in artificial Kondo impurities made in carbon nanotube devices. We find a striking enhancement of the current noise within the Kondo resonance, in contradiction with simple non-interacting theories. Our findings provide a test bench for one of the most important many-body theories of condensed matter in out of equilibrium situations and shed light on the noise properties of highly conductive molecular devices.Comment: minor differences with published versio

Low loss GaN waveguides for visible light on Si substrates

In this work, we present the fabrication and the characterization of an optical waveguide made of AlN and GaN layers grown by MBE on a Si(111) substrate. For the fundamental mode at 633 nm, the propagation losses are in the order of 2 dB/cm, which is a good number for SC waveguides at this wavelength. The propagation losses dramatically increase with the mode order. A careful comparison of measurements and modeling of the complete structure allows identifying the part of the losses due to absorption in the Si substrate, and showing that propagation losses could be further reduced by using well chosen SOI substrates