541 research outputs found
Josephson oscillation linewidth of ion-irradiated YBaCuO junctions
We report on the noise properties of ion-irradiated YBaCuO
Josephson junctions. This work aims at investigating the linewidth of the
Josephson oscillation with a detector response experiment at 132 GHz.
Experimental results are compared with a simple analytical model based on the
Likharev-Semenov equation and the de Gennes dirty limit approximation. We show
that the main source of low-frequency fluctuations in these junctions is the
broadband Johnson noise and that the excess () noise contribution
does not prevail in the temperature range of interest, as reported in some
other types of high-T superconducting Josephson junctions. Finally, we
discuss the interest of ion-irradiated junctions to implement frequency-tunable
oscillators consisting of synchronized arrays of Josephson junctions
Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO
Although zinc oxide is a promising material for the fabrication of short
wavelength optoelectronic devices, p-type doping is a step that remains
challenging for the realization of diodes. Out of equilibrium methods such as
ion implantation are expected to dope ZnO successfully provided that the
non-radiative defects introduced by implantation can be annealed out. In this
study, ZnO substrates are implanted with nitrogen ions, and the extended
defects induced by implantation are studied by transmission electron microscopy
and X-ray diffraction (XRD), before and after annealing at 900^{\circ}C. Before
annealing, these defects are identified to be dislocation loops lying either in
basal planes in high N concentration regions, or in prismatic planes in low N
concentration regions, together with linear dislocations. An uniaxial
deformation of 0.4% along the c axis, caused by the predominant basal loops, is
measured by XRD in the implanted layer. After annealing, prismatic loops
disappear while the density of basal loops decreases and their diameter
increases. Moreover, dislocation loops disappear completely from the
sub-surface region. XRD measurements show a residual deformation of only 0.05%
in the implanted and annealed layer. The fact that basal loops are favoured
against prismatic ones at high N concentration or high temperature is
attributed to a lower stacking fault energy in these conditions. The
coalescence of loops and their disappearance in the sub-surface region are
ascribed to point defect diffusion. Finally, the electrical and optical
properties of nitrogen-implanted ZnO are correlated with the observed
structural features.Comment: 8 page
Conserved spin and orbital phase along carbon nanotubes connected with multiple ferromagnetic contacts
We report on spin dependent transport measurements in carbon nanotubes based
multi-terminal circuits. We observe a gate-controlled spin signal in non-local
voltages and an anomalous conductance spin signal, which reveal that both the
spin and the orbital phase can be conserved along carbon nanotubes with
multiple ferromagnetic contacts. This paves the way for spintronics devices
exploiting both these quantum mechanical degrees of freedom on the same
footing.Comment: 8 pages - minor differences with published versio
Competition between electron pairing and phase coherence in superconducting interfaces
In LaAlO3/SrTiO3 heterostructures, a gate tunable superconducting electron gas is confined in a quantum well at the interface between two insulating oxides. Remarkably, the gas coexists with both magnetism and strong Rashba spin–orbit coupling. However, both the origin of superconductivity and the nature of the transition to the normal state over the whole doping range remain elusive. Here we use resonant microwave transport to extract the superfluid stiffness and the superconducting gap energy of the LaAlO3/SrTiO3 interface as a function of carrier density. We show that the superconducting phase diagram of this system is controlled by the competition between electron pairing and phase coherence. The analysis of the superfluid density reveals that only a very small fraction of the electrons condenses into the superconducting state. We propose that this corresponds to the weak filling of high- energy dxz/dyz bands in the quantum well, more apt to host superconductivity
A stochastic network with mobile users in heavy traffic
We consider a stochastic network with mobile users in a heavy-traffic regime.
We derive the scaling limit of the multi-dimensional queue length process and
prove a form of spatial state space collapse. The proof exploits a recent
result by Lambert and Simatos which provides a general principle to establish
scaling limits of regenerative processes based on the convergence of their
excursions. We also prove weak convergence of the sequences of stationary joint
queue length distributions and stationary sojourn times.Comment: Final version accepted for publication in Queueing Systems, Theory
and Application
Noisy Kondo impurities
The anti-ferromagnetic coupling of a magnetic impurity carrying a spin with
the conduction electrons spins of a host metal is the basic mechanism
responsible for the increase of the resistance of an alloy such as
CuFe at low temperature, as originally suggested by
Kondo . This coupling has emerged as a very generic property of localized
electronic states coupled to a continuum . The possibility to design artificial
controllable magnetic impurities in nanoscopic conductors has opened a path to
study this many body phenomenon in unusual situations as compared to the
initial one and, in particular, in out of equilibrium situations. So far,
measurements have focused on the average current. Here, we report on
\textit{current fluctuations} (noise) measurements in artificial Kondo
impurities made in carbon nanotube devices. We find a striking enhancement of
the current noise within the Kondo resonance, in contradiction with simple
non-interacting theories. Our findings provide a test bench for one of the most
important many-body theories of condensed matter in out of equilibrium
situations and shed light on the noise properties of highly conductive
molecular devices.Comment: minor differences with published versio
Low loss GaN waveguides for visible light on Si substrates
In this work, we present the fabrication and the characterization of an optical waveguide made of AlN and GaN layers grown by MBE on a Si(111) substrate. For the fundamental mode at 633 nm, the propagation losses are in the order of 2 dB/cm, which is a good number for SC waveguides at this wavelength. The propagation losses dramatically increase with the mode order. A careful comparison of measurements and modeling of the complete structure allows identifying the part of the losses due to absorption in the Si substrate, and showing that propagation losses could be further reduced by using well chosen SOI substrates
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