Monte Carlo optimization of redundancy of nanotechnology computer memories in the conditions of background radiation

The aim of this paper is applying statistical laws and enlargement law to determine a redundancy level of nanotechnology computers with a pre-given statistical confidence. We have tested radiation hardness of MOS memory components (commercial EPROM memory) using both Monte Carlo simulation method and experimental procedure. Then, by using the statistical enlargement law, we have performed the analysis of redundancy optimization of MOS structure for nanotechnology computers, under the influence of background radiation, and obtained more than satisfying results. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

Reliability of computer memories in radiation environment

The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM) computer memories in the field of radiation. Magnetic memories have been examined in the field of neutron radiation, and semiconductor memories in the field of gamma radiation. The obtained results have shown a high radiation hardness of magnetic memories. On the other side, it has been shown that semiconductor memories are significantly more sensitive and a radiation can lead to an important damage of their functionality. [Projekat Ministarstva nauke Republike Srbije, br. 171007

Overview of radiation effects on emerging non-volatile memory technologies

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

Analysis of correlation and regression between particle ionizing radiation parameters and the stability characteristics of irradiated monocrystalline Si film

This paper deals with the analysis of correlation and regression between the parameters of particle ionizing radiation and the stability characteristics of the irradiated monocrystalline silicon film. Based on the presented theoretical model of correlation and linear regression between two random variables, numeric and real experiments were performed. In the numeric experiment, a simulation of the effect of alpha radiation on a thin layer of monocrystalline silicon was performed by observing a number of vacancies along the film depth resulting from a single incident alpha particle. In the real experiment, the irradiation of a thin silicon film by alpha particles from a radioactive Am-241 alpha emitter was performed. The observed values of radiation effect on the Si film were specific resistance and the concentration of free charge carriers. The results showed a fine concordance between numeric and real experiments. Correlation verification of the observed values was presented by linear regression functions. [Projekat Ministarstva nauke Republike Srbije, br. 171007

Comparison of the empirical variances and mean values of normally distributed populations of nuclear counts

This paper discusses the possibility of applying the F-test and double t-test in problems related to the identification of number of radioactive isotopes in a contaminated area by using only counters for radiation detection. The descriptions of the F-test and the double t-test are given along with the corresponding tabular values that enable their implementation. Finally, the experiment is presented via two radioactive samples. The results of the experiment were treated in the manner proposed in the paper and satisfactory results were obtained. [Projekat Ministarstva nauke Republike Srbije, br. 171007