Synchronization of spin-transfer oscillators driven by stimulated microwave currents

We have simulated the non-linear dynamics of networks of spin-transfer oscillators. The oscillators are magnetically uncoupled but electrically connected in series. We use a modified Landau-Lifschitz- Gilbert equation to describe the motion of each oscillator in the presence of the oscillations of all the others. We show that the oscillators of the network can be synchronized not only in frequency but also in phase. The coupling is due to the microwave components of the current induced in each oscillator by the oscillations in all the other oscillators. Our results show how the emitted microwave power of spin-transfer oscillators can be considerably enhanced by current-induced synchronization in an electrically connected network. We also discuss the possible application of our synchronization mechanism to the interpretation of the surprisingly narrow microwave spectrum in some isolated spin-transfer oscillators

Anomalous Hall Effect in Ferromagnetic Metals: Role of Phonons at Finite Temperature

The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a function of temperature $T$, inelastic scattering rate $\gamma$, chemical potential $\mu$, and impurity concentration $x_{\rm imp}$. We find that the new scaling law holds over a wide range of these parameters; $-\sigma_{xy}= (\alpha \sigma_{xx0}^{-1} + \beta \sigma_{xx0}^{-2}) \sigma_{xx}^2 + b$, with $\sigma_{\mu \nu}$ ($\sigma_{\mu \nu 0}$) being the conductivity tensor (with only elastic scattering), which corresponds to the recent experimental observation [Phys. Rev. Lett. {\bf 103} (2009) 087206]. The condition of this scaling is examined. Also, it is found that the intrinsic mechanism depends on temperature under a resonance condition.Comment: 5 figure

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device

Switching a spin-valve back and forth by current-induced domain wall motion

We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the current density required to move DW is only of the order of 10^6 A/cm^2. For H = 3 Oe, a back and forth DW motion between two stable positions is observed. We also discuss the effect of an applied field on the DW motion.Comment: 4 pages, 3 figure

Ordering in a spin glass under applied magnetic field

Torque, torque relaxation, and magnetization measurements on a AuFe spin glass sample are reported. The experiments carried out up to 7 T show a transverse irreversibility line in the (H,T) plane up to high applied fields, and a distinct strong longitudinal irreversibility line at lower fields. The data demonstrate for that this type of sample, a Heisenberg spin glass with moderately strong anisotropy, the spin glass ordered state survives under high applied fields in contrast to predictions of certain "droplet" type scaling models. The overall phase diagram closely ressembles those of mean field or chiral models, which both have replica symmetry breaking transitions.Comment: 4 pages, 3 figures, accepted for PR

Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion

In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall configuration, the current injection scheme and the symmetry of the spin-orbit torque. The best identified configuration corresponds to a N\'eel wall driven by spin Hall Effect in a narrow strip with perpendicular magnetic anisotropy. In this case, the domain wall velocity can be a factor of 10 larger than that for the conventional current-in-plane spin-transfer torque.Comment: 9 pages, 3 figures, 1 tabl

Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.Comment: 5 pages, 4 figure

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current density of 0.34 nA.$\mu m^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results