Rapid extraction of volatile compounds from Citrus fruits using a microwave dry distillation

Three different extraction methods were used for a comparative study of essential oil (EO) from fresh Citrus peels: Traditional hydrodistillation (HD), cold pressing (CP) and innovative microwave ‘dry’ distillation or microwave-accelerated distillation (MAD). The microwave process offers significant advantages over conventional alternatives, viz. shorter distillation period (30 min vs. 3 h for hydrodistillation and 1 h for cold pressing); better yields (0.24% vs. 0.21% for HD and 0.054% for CP); environmental impact (energy charge is noticeably superior for performing HD and for mechanical motors (CP) than that necessary for quick MAD assay); cleaner features (as no remains creation and no solvent or water used); raises antibacterial properties ; and offers a more precious EO (with high amounts of oxygenated compounds).Keywords: Microwave extraction; Hydrodistillation; Cold pressing; Essential oil; Citru

BAs and boride III-V alloys

Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s-s repulsion in BAs relative to most other III-V compounds. We find unexpected valence band offsets of BAs with respect to GaAs and AlAs. The valence band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs-GaAs alloys, we find (i) a relatively small (~3.5 eV) and composition-independent band gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap (ii) boron ``semi-localized'' states in the conduction band (similar to those in GaN-GaAs alloys), and (iii) bulk mixing enthalpies which are smaller than in GaN-GaAs alloys. The unique features of boride III-V alloys offer new opportunities in band gap engineering.Comment: 18 pages, 14 figures, 6 tables, 61 references. Accepted for publication in Phys. Rev. B. Scheduled to appear Oct. 15 200

Crystal structures of 2,2′-bipyridin-1-ium 1,1,3,3-tetracyano-2-ethoxyprop-2-en-1-ide and bis(2,2′-bipyridin-1-ium) 1,1,3,3-tetracyano-2-(dicyano-methylene) propane-1,3-diide (dataset)

CCDC 1059033, 105903