Elimination of Supply Harmonics: An Evolution of Current Compensation and Active Filtering Methods

The price of the extensive use of power electronic devices is becoming clear: increasing harmonic pollution. This survey takes a brief look at background information related to harmonics, including their sources, effects, and characteristics. Then, the evolution of the harmonics elimination approaches of current compensation and active filtering, which are becoming more feasible due to research and technological improvements, are discussed in order to give some insight into the directions that research is taking

Elimination of Supply Harmonics

The price of the extensive use of power electronic devices is becoming clear: increasing harmonic pollution. The greater amount of harmonics being introduced into power distribution systems is of concern to both power consumers and power companies. First, a brief look is taken at background information which describes harmonic sources, effects, and characteristics. Then the evolution of the harmonics elimination approaches of current compensation and active filtering are discussed to give some insight into the directions that research is taking

Experimental Application of Extended Kalman Filtering for Sensor Validation

A sensor failure detection and identification scheme for a closed loop nonlinear system is described in this paper. Detection and identification tasks are performed by estimating parameters directly related to potential failures. An extended Kalman filter is used to estimate the fault-related parameters, while a decision algorithm based on threshold logic processes the parameter estimates to detect possible failures. For a realistic evaluation of its performance, the detection scheme has been implemented on an inverted pendulum controlled by real-time control software. The failure detection and identification scheme is tested by applying different types of failures on the sensors of the inverted pendulum. Experimental results are presented to validate the effectiveness of the approach

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film

High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film