Andreev reflection at the interface with an oxide in the quantum Hall regime

Quantum Hall/superconductor junctions have been an attractive topic as the two macroscopically quantum states join at the interface. Despite longstanding efforts, however, experimental understanding of this system has not been settled yet. One of the reasons is that most semiconductors hosting high-mobility two-dimensional electron systems (2DES) usually form Schottky barriers at the metal contacts, preventing efficient proximity between the quantum Hall edge states and Cooper pairs. Only recently have relatively transparent 2DES/superconductor junctions been investigated in graphene. In this study, we propose another material system for investigating 2DES/superconductor junctions, that is ZnO-based heterostrcuture. Due to the ionic nature of ZnO, a Schottky barrier is not effectively formed at the contact with a superconductor MoGe, as evidenced by the appearance of Andreev reflection at low temperatures. With applying magnetic field, while clear quantum Hall effect is observed for ZnO 2DES, conductance across the junction oscillates with the filling factor of the quantum Hall states. We find that Andreev reflection is suppressed in the well developed quantum Hall regimes, which we interpret as a result of equal probabilities of normal and Andreev reflections as a result of multiple Andreev reflection at the 2DES/superconductor interface.Comment: 18 pages, 8 figure

Andreev Reflection at the Interface with an Oxide in the Quantum Hall Regime

Quantum Hall/superconductor junctions have been an attractive topic as the two macroscopically quantum states join at the interface. Despite longstanding efforts, however, experimental understanding of this system has not been settled yet. One of the reasons is that most semiconductors hosting high-mobility two-dimensional electron systems (2DES) usually form Schottky barriers at the metal contacts, preventing efficient proximity between the quantum Hall edge states and Cooper pairs. Only recently have relatively transparent 2DES/superconductor junctions been investigated in graphene. In this study, we propose another material system for investigating 2DES/superconductor junctions, that is ZnO-based heterostructure. Due to the ionic nature of ZnO, a Schottky barrier is not effectively formed at the contact with a superconductor MoGe, as evidenced by the appearance of Andreev reflection at low temperatures. With applying magnetic field, while clear quantum Hall effect is observed for ZnO 2DES, conductance across the junction oscillates with the filling factor of the quantum Hall states. We find that Andreev reflection is suppressed in the well developed quantum Hall regimes, which we interpret as a result of equal probabilities of normal and Andreev reflections as a result of multiple Andreev reflection at the 2DES/superconductor interface

Quasiparticle Tunneling across an Exciton Condensate

The bulk properties of the bilayer quantum Hall state at total filling factor one have been intensively studied in experiment. Correlation induced phenomena such as Josephson-like tunneling and zero Hall resistance have been reported. In contrast, the edge of this bilayer state remains largely unexplored. Here, we address this edge physics by realizing quasiparticle tunneling across a quantum point contact. The tunneling manifests itself as a zero bias peak that grows with decreasing temperature. Its shape agrees quantitatively with the formula for weak quasiparticle tunneling frequently deployed in the fractional quantum Hall regime in single layer systems, consistent with theory. Interestingly, we extract a fractional charge of only a few percent of the free electron charge, which may be a signature of the theoretically predicted leakage between the chiral edge and the bulk mediated by gapless excitations

Quasiparticle Tunneling across an Exciton Condensate

The bulk properties of the bilayer quantum Hall state at total filling factor one have been intensively studied in experiment. Correlation induced phenomena such as Josephson-like tunneling and zero Hall resistance have been reported. In contrast, the edge of this bilayer state remains largely unexplored. Here, we address this edge physics by realizing quasiparticle tunneling across a quantum point contact. The tunneling manifests itself as a zero bias peak that grows with decreasing temperature. Its shape agrees quantitatively with the formula for weak quasiparticle tunneling frequently deployed in the fractional quantum Hall regime in single layer systems, consistent with theory. Interestingly, we extract a fractional charge of only a few percent of the free electron charge, which may be a signature of the theoretically predicted leakage between the chiral edge and the bulk mediated by gapless excitations

MgZnO/ZnO界面における高移動度二次元電子の輸送現象と相関効果

学位の種別: 課程博士審査委員会委員 : (主査)東京大学教授 有馬 孝尚, 東京大学教授 上田 和夫, 東京大学教授 家 泰弘, 東京大学教授 川﨑 雅司, 東京大学准教授 松田 康弘, 東京大学准教授 Mikk LippmaaUniversity of Tokyo(東京大学

Spin and Valley Polarized Multiple Fermi Surfaces of {\alpha}-RuCl3_3/Bilayer Graphene Heterostructure

We report the transport properties of ${\alpha}$-RuCl$_3$/bilayer graphene heterostructures, where carrier doping is induced by a work function difference, resulting in distinct electron and hole populations in ${\alpha}$-RuCl3 and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant band modifications within the system. In particular, we observe the emergence of spin and valley polarized multiple hole-type Fermi pockets, originating from the spin-selective band hybridization between ${\alpha}$-RuCl$_3$ and bilayer graphene, breaking the spin degree of freedom. Unlike ${\alpha}$-RuCl$_3$ /monolayer graphene system, the presence of different hybridization strengths between ${\alpha}$-RuCl$_3$ and the top and bottom graphene layers leads to an asymmetric behavior of the two layers, confirmed by effective mass experiments, resulting in the manifestation of valley-polarized Fermi pockets. These compelling findings establish ${\alpha}$-RuCl$_3$ proximitized to bilayer graphene as an outstanding platform for engineering its unique low-energy band structure.Comment: accepted to AP

Type-II Ising Pairing in Few-Layer Stanene

Spin-orbit coupling has proven indispensable in realizing topological materials and more recently Ising pairing in two-dimensional superconductors. This pairing mechanism relies on inversion symmetry breaking and sustains anomalously large in-plane polarizing magnetic fields whose upper limit is expected to diverge at low temperatures, although experimental demonstration of this has remained elusive due to the required fields. In this work, the recently discovered superconductor few-layer stanene, i.e. epitaxially strained $\alpha$-Sn, is shown to exhibit a new type of Ising pairing between carriers residing in bands with different orbital indices near the $\Gamma$-point. The bands are split as a result of spin-orbit locking without the participation of inversion symmetry breaking. The in-plane upper critical field is strongly enhanced at ultra-low temperature and reveals the sought for upturn

MgZnO/ZnO heterostructures with electron mobility exceeding 1 × 10⁶ cm²/Vs

The inherently complex chemical and crystallographic nature of oxide materials has suppressed the purities achievable in laboratory environments, obscuring the rich physical degrees of freedom these systems host. In this manuscript we provide a systematic approach to defect identification and management in oxide molecular beam epitaxy grown MgZnO/ZnO heterostructures which host two-dimensional electron systems. We achieve samples displaying electron mobilities in excess of 1 × 10⁶ cm²/Vs. This data set for the MgZnO/ZnO system firmly establishes that the crystalline quality has become comparable to traditional semiconductor materials