I just want to count them! Considerations when choosing a deer population monitoring method

Effective management of any population involves decisions based on the levels of abundance at particular points in time. Hence the choice of an appropriate method to estimate abundance is critical. Deer are not native to Australia and are a declared pest in some states where their numbers must be controlled in environmentally sensitive areas. The aim of this research was to help Australian land managers choose between widely used methods to count deer. We compared population estimates or indices from: distance sampling, aerial surveys, spotlight counts, and faecal pellet counts. For each we estimated the labour input, cost, and precision. The coefficient of variation varied with method and time of year from 8.7 to 36.6%. Total labour input per sampling event varied from 11 to 136 h. Total costs of vehicles and equipment per sampling event varied from AU$913 to$2966. Overall, the spotlight method performed the best at our study site when comparing labour input, total cost and precision. However, choice of the most precise, cost effective method will be site specific and rely on information collected from a pilot study. We provide recommendations to help land managers choose between possible methods in various circumstances

Solution-Based Stoichiometric Control over Charge Transport in Nanocrystalline CdSe Devices

Using colloidal CdSe nanowire (NW) field-effect transistors (FETs), we demonstrated the dependence of carrier transport on surface stoichiometry by chemically manipulating the atomic composition of the NW surface. A mild, room-temperature, wet-chemical process was devised to introduce cadmium, selenium, or sulfur adatoms at the surface of the NWs in completed devices. Changes in surface composition were tested for by energy dispersive spectroscopy and inductively coupled plasma-atomic emission spectroscopy and through the use of the vibrational reporter thiocyanate. We found that treatment with cadmium acetate enhances electron currents, while treatment with sodium selenide or sodium sulfide suppressed them. The efficacy of doping CdSe NWs through subsequent thermal diffusion of indium was highly dependent on the surface composition. While selenium-enriched CdSe NW FETs were characterized by little to no electron currents, when combined with indium, they yielded semimetallic devices. Sulfur-enriched, indium-doped devices also displayed dramatically enhanced electron currents, but to a lesser extent than selenium and formed FETs with desirable <i>I</i>_ON/<i>I</i>_OFF >10⁶. The atomic specificity of the electronic behavior with different surface chalcogens suggested indium was bound to chalcogens at the NW surface, indicating commonalities with and implications for indium-containing CdSe nanocrystal films. Low temperature measurements of indium-doped CdSe NW FETs showed no evidence of impurity scattering, further supporting the existence of an indium–chalcogen interaction at the surface rather than in the core of the NW

Metal-Enhanced Upconversion Luminescence Tunable through Metal Nanoparticle–Nanophosphor Separation

We have demonstrated amplification of luminescence in upconversion nanophosphors (UCNPs) of hexagonal phase NaYF₄ (β-NaYF₄) doped with the lanthanide dopants Yb³⁺, Er³⁺ or Yb³⁺, Tm³⁺ by close proximity to metal nanoparticles (NPs). We present a configuration in which close-packed monolayers of UCNPs are separated from a dense multilayer of metal NPs (Au or Ag) by a nanometer-scale oxide grown by atomic layer deposition. Luminescence enhancements were found to be dependent on the thickness of the oxide spacer layer and the type of metal NP with enhancements of up to 5.2-fold proximal to Au NPs and of up to 45-fold proximal to Ag NPs. Concomitant shortening of the UCNP luminescence decay time and rise time is indicative of the enhancement of the UCNP luminescence induced by resonant plasmonic coupling and nonresonant near-field enhancement from the metal NP layer, respectively

<i>In Situ</i> Repair of High-Performance, Flexible Nanocrystal Electronics for Large-Area Fabrication and Operation in Air

Colloidal semiconductor nanocrystal (NC) thin films have been integrated in light-emitting diodes, solar cells, field-effect transistors (FETs), and flexible, electronic circuits. However, NC devices are typically fabricated and operated in an inert environment since the reactive surface and high surface-to-volume ratio of NC materials render them sensitive to oxygen, water, and many solvents. This sensitivity has limited device scaling and large-scale device integration achievable by conventional fabrication technologies, which generally require ambient air and wet-chemical processing. Here, we present a simple, effective route to reverse the detrimental effects of chemical and environmental exposure, by incorporating, <i>in situ</i>, a chemical agent, namely, indium metal, which is thermally triggered to diffuse and repair the damage. Taking advantage of the recovery process, CdSe NC FETs are processed in air, patterned using the solvents of lithography, and packaged by atomic layer deposition to form large-area and flexible high-performance NC devices that operate stably in air