Preparation and Electrical Properties of PZT Thin Film Capacitors for Ferroelectric Random Access Memory

Keywords: PZT thin film, D-E hysteresis, SrRuO3 film, polarization switching, inprint, degredatio

巻頭言（八戸工業大学エネルギー環境システム研究所紀要第9巻）

表紙に表示のISSNはタイトル変更に伴い、21866015に変更 第8巻までのタイトル「八戸工業大学異分野融合科学研究所紀要

Dielectric Relaxation Phenomena of Polylactic Acid with -Crystalline Chitin

-crystalline chitin was added to polylactic acid (PLA), and this PLA was then heat-treated at 100∘C for one minute. The crystallinity of the heat-treated PLA increased to more than 40%, and its crystallization speed also increased significantly. The temperature dependency of these materials’ relative permittivity () and relative dielectric loss factor () was also examined. The dielectric absorption peak value in curve of the PLA to which chitin was added and was smaller than that of PLA without chitin. Additionally, the Havriliak-Negami relaxation function was used to produce approximation curves for the frequency dependency of and of chitin with PLA added at 80∘C. As a result, the relaxation strength (Δ) of the chitin with PLA added was smaller than that of the PLA without chitin, and the relaxation time () of the chitin with PLA added was approximately 2.5 times larger than that of the PLA without chitin