FUJITA Shigetaka

KAKEMOTO Hirofumi

MASUDA Yoichiro

English

MASUDA, Yoichiro

増田, 陽一郎

マスダ, ヨウイチロウ

FUJITA, Shigetaka

藤田, 成隆

フジタ, シゲタカ

KANEMOTO, Hirofumi

8540

Hachinohe Institute of Technology Repository / 八戸工業大学学術リポジトリ

Preparation and Ferroelectric Propertiesof BaTi03 Related Thin FilHlsYoichiro W笙ASUDA*,Shigetaka FuJITA*and Hirofumi KAKEMOTO*・AbstractBaTiOO,(Hf。5, Zr05)O0903 thin■lms On Pt/Si02/Si(100),Nb doped SrTi03(100)and(111)substrates were synthesized by pulsed laser deposition rnethod using fourth harmonic generatedlight of Nd3+:YAG laser beam under lo、′v02 partialモ〕ressureTheゲη―sゲrιィObservation of BaTi091(Hf05, ZrOs)。。903 Film deposition on Nb doped SrTi03(100)Substrate ttras performed using renection high energy electron beam diffraction methodThe BaTi。9](Hf05, ZrOs)O OO03 thin{ilms deposited on Nb doped SrTi03(100)and(111)StibStratessho都/ed a preferential[100]and a preferential[111]orientation】respective yThe ferroelectric properties of BaTi。91(Hfo , Zr05)O0903 thin lilms were investigated byelectrical rneasurements  The frequency dependence of the dielectric constant of BaTi091(Hf05,Zr05)O0903 thin ilrn、vas nauenced by loM/dielectric phase,and it analyzed by the Debye rnodelThe remanent polarization and coercive electric rield Of BaTi。91(Hfos,Zr05)00009 thin ilrn on Nbdoped SrTi03(111)Substrate were measured at room temperature,and those walues were 3 1 μC/cm2and 36 kVたm,respectivelyrて9υportrs:BaTioOl(Hf。5,Zr05)O0900,pulsed laser deposition method,thin■lm,RHEED,ferroelectric properties,hysteresis ioopINTRODUCT10NBaT103(BT)iS Well known as a fundamental ferrOelectric perovskite oxide(AB03) Bysubstituting small portion of the B(Ti)―site O BaTi03 With(Hf05,Zr05)CatiOns, namely,BaTi091(Hf05,Zr05)O0903(BTHZ)appears rhombohedral structure(C3υ,α=♭=ο=3.99A, α=β=γ=895°)at r00m temperature(RT).BTHZ ShOws large remanent polarization(P/=15μc/cm2)and Small coerc市e elect ic neld(Ec=350V/cm)in cOmpaison with those of BT Oみ=70μC/cm2,Ec=3.5kV/cm)[1,2] BTHZ has been nOticed for its potentials as electronicdevice applications for ferroelectric random access memories(FeRAWIs)and infrared sensors.In addition,BTHZ is attracted for lnicroactuators,because of a quadratic strain function on anac electrical aeld above l kV/cm[2].Hence,investigations about BTHZ thin nlm's growthconditions and its ferroelectric properties are very important studyよ/1any attempts have been made on ferrOelectric thin lillns has been gro、vn On Pt depos tedSi02/Si Stibstrate  Recently,the burer layer and substrate、■llich possesses perovskite struc‐ture such as SrRu03 and SrTi03(STO)have been attracted for an epitaxial growth offerroelectric thin alms[3]平成 12年10月13日受理ホ電気電子工学科・教授*4電気電子工学科・研究員- 43 -一

Preparation and Ferroelectric Properties of BaTiO3 Related Thin Films

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Preparation and Ferroelectric Properties of BaTiO3 Related Thin Films

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