FUJITA Shigetaka

HIRAI Toshio

MASUDA Yoichiro

MASUMOTO Hiroshi

NISHIDA Takashi

English

MASUDA, Yoichiro

増田, 陽一郎

マスダ, ヨウイチロウ

FUJITA, Shigetaka

藤田, 成隆

フジタ, シゲタカ

NISHIDA, Takashi

4234

増本, 博

3114

マスモト, ヒロシ

MASUMOTO, Hiroshi

平井, 敏雄

3116

ヒライ, トシオ

HIRAI, Toshio

Hachinohe Institute of Technology Repository / 八戸工業大学学術リポジトリ

Degradation of Perovskite Pb(Zr,Ti)03 Thin filmsFabricated by Pulsed Laser AblationYoichiroよ/1ASUDAキ,Shigetaka FuJITAホ,Takashi NIsHIDA半キHiroshi MasuMoTO・*・ and Toshio HIRAI・*料AbstractFerroelectric thin ilms of Pb(Zr,Ti)03(PZT)Were prepared on platinum (Pt)and srRu03(SRO)thin lilm electrodes by the fourth harmonic wave(λ=266 nm)of a pulsed Nd3+:YAGlaser ablation technique  Ferroelectric degradation of ferroelectric thin illn capacitors isinvestigated  As the results,the remanent polarization value of PZT■llns deposited on an SROelectrode as a buffer layer is remained constantly more than 101l s、vitching cycles  lt iscOnirmed that polarization s、、アitching degradation is ilnproved by using an SRO thin ilmelectrode as a buffer layerFt,υψοrtrs I Ferroelectics,thirn■lrns,Pt electrode,SRO electrods,polarization s、vitching,degradationsIntroductionFerroelectric thin flllns have recently attracted great interest as ne、v dielectric materialsfor Gbit―scale ferroelectric random access memories(FRAMs)1~3,pieZomicro actuators4,5,pyroelectric detectors,and nonlinear optical thin lillns.  A fair amount of attempts on synthesisof ferrOelectric thin ttillns has been demonstrated by using a laser ablation technique so far6.Degradation of ferroelectric thin 11llns,such as ferroelectric fatigue,ferroelectric aging andresistance degradation,has been investigated and their rnechanisms have been proposed.  Sincepinning and in―print erects associated、vith electronic―charge trapping and oxygen vacanciesrestrict the lifetilne and rehability of the devices that utilize ferroelectric thin lillns,eliminatingof these erects is iコaportant to realize FRpLMs7,3.  BeSides, degradation of ferroelectrics isobserved in cases、'、アhen a ferroelectric thin film is directly gro耶〆n on a Si覇〆afer,because varioussihcide compounds are synthesized.  In order to overcome these problems,ferroelectric thinalms have been grOwn on the oxide electrode,such as Ru02,Ir029,SrRu03(SRO)10,aS theburer layerll.In this study,Pb(Zr,Tェ)03(P T)thin lilln capacitors are fabricated using Pt and SRO/WIgO substrates by means of a laser ablation technique and their polarization switchingdegradation properties are investigated平成 10年10月16日受理*電気工学科・教授料 電気工学科・日本学術振興会研究員帯半東北大学金属材料研究所・助手ホ・**東北大学金属材料研究所 。教授一- 59 -―

Degradation of Perovskite Pb(Zr,Ti)O3 Thin films Fabricated by Pulsed Laser Ablation

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Degradation of Perovskite Pb(Zr,Ti)O3 Thin films Fabricated by Pulsed Laser Ablation

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