42 research outputs found
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Revised model of thermally stimulated current in MOS capacitors
It is shown analytically and experimentally that thermally stimulated current (TSC) measurements at negative bias incompletely describe oxide-trap charge in SIMOX and bipolar base oxides irradiated at 0 V. Positive-bias TSC is also required
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Stability of Trapped Electrons in SiO(2)
Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of {approximately}3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si
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Latent interface traps and 1/f noise in irradiated MOS devices
A delayed increase in 1/f noise is observed for pMOS transistors showing latent radiation-induced interface-trap buildup. The latent interface traps and increased noise appear to result from the same thermally activated process, likely involving hydrogen
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Common-source TLD and RADFET characterization of Co-60, Cs-137, and x-ray irradiation sources
Dose enhancement and dose rate were measured in more than a dozen gamma sources using pMOS RADFETs and TLDs from two independent sources. ARACOR X-ray dose rates were calibrated using single- and dual-dielectric RADFETs
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Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device
In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{sub 2}:H{sub 2}; 95:5) above 500{degrees}C leads to spontaneous incorporation of mobile H{sup +} ions in the buried SiO{sub 2} layer. We demonstrate that, unlike the alkali ions feared as killer contaminants in the early days, the space charge distribution of these mobile protons within the buried oxide layer can be very well controlled and easily rearranged with relatively high speed at room temperature. The hysteresis in the flat band voltage shift provides a unique vehicle to study proton kinetics in silicon dioxide thin films. It is further shown how this effect can be used as the basis for a reliable nonvolatile FET memory device that has potential to be competitive with state-of-the-art Si-based memory technologies. The power of this novel device is its simplicity; it requires few processing steps, all of which are standard in Si integrated-circuit fabrication
FUENTES, JOSEFA, HERNÁNDEZ, LOLINA [Material gráfico]
BCopia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201
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A first-principles approach to total-dose hardness assurance
A first-principles approach to radiation hardness assurance was described that provides the technical background to the present US and European total-dose radiation hardness assurance test methods for MOS technologies, TM 1019.4 and BS 22900. These test methods could not have been developed otherwise, as their existence depends not on a wealth of empirical comparisons of IC data from ground and space testing, but on a fundamental understanding of MOS defect growth and annealing processes. Rebound testing should become less of a problem for advanced MOS small-signal electronics technologies for systems with total dose requirements below 50--100 krad(SiO{sub 2}) because of trends toward much thinner gate oxides. For older technologies with thicker gate oxides and for power devices, rebound testing is unavoidable without detailed characterization studies to assess the impact of interface traps on devices response in space. The QML approach is promising for future hardened technologies. A sufficient understanding of process effects on radiation hardness has been developed that should be able to reduce testing costs in the future for hardened parts. Finally, it is hoped that the above discussions have demonstrated that the foundation for cost-effective hardness assurance tests is laid with studies of the basic mechanisms of radiation effects. Without a diligent assessment of new radiation effects mechanisms in future technologies, one cannot be assured that the present generation of radiation test standards will continue to apply
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Fast and slow border traps in MOS devices
Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced 1/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of fast (switching times between {approximately} 10{sup {minus}6} and 1 s) and slow (switching times greater than {approximately} 1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that different types of E{prime} defects (trivalent Si centers in SiO{sub 2} associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps
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Enhanced low-rate radiation-induced charge trapping at the emitter-base/oxide interface of bipolar devices
The performance, reliability and radiation hardness of modern bipolar/BiCMOS devices and IC`s is limited by changes in surface recombination velocity and surface potential due to oxide-trap charge in the base oxide and near-midgap interface traps at the emitter- base/oxide interface. This report discusses how this charge trapping is enhanced by low-rate radiation as with implantation and annealing