Scalable, ultra-resistant structural colors based on network metamaterials

Structural colors have drawn wide attention for their potential as a future printing technology for various applications, ranging from biomimetic tissues to adaptive camouflage materials. However, an efficient approach to realize robust colors with a scalable fabrication technique is still lacking, hampering the realization of practical applications with this platform. Here, we develop a new approach based on large-scale network metamaterials that combine dealloyed subwavelength structures at the nanoscale with lossless, ultra-thin dielectric coatings. By using theory and experiments, we show how subwavelength dielectric coatings control a mechanism of resonant light coupling with epsilon-near-zero regions generated in the metallic network, generating the formation of saturated structural colors that cover a wide portion of the spectrum. Ellipsometry measurements support the efficient observation of these colors, even at angles of 70°. The network-like architecture of these nanomaterials allows for high mechanical resistance, which is quantified in a series of nano-scratch tests. With such remarkable properties, these metastructures represent a robust design technology for real-world, large-scale commercial applications

Phase-change-driven dielectric-plasmonic transitions in chalcogenide metasurfaces

Chalcogenides—alloys based on group-16 ‘chalcogen’ elements (sulfur, selenium, and tellurium) covalently bound to ‘network formers’ such as arsenic, germanium, antimony, and gallium—have a variety of technologically useful properties, including infrared transparency, high optical nonlinearity, photorefractivity and readily induced, reversible, non-volatile structural phase switching. Such phase-change materials are of enormous interest in the fields of plasmonics and nanophotonics. However, in such applications, the fact that some chalcogenides accrue plasmonic properties in the transition from an amorphous to a crystalline state, i.e., the real part of their relative permittivity becomes negative, has gone somewhat unnoticed. Indeed, one of the most commercially important chalcogenide compounds, germanium antimony telluride (Ge2:Sb2:Te5 or GST), which is widely used in rewritable optical and electronic data storage technologies, presents this behavior at wavelengths in the near-ultraviolet to visible spectral range. In this work, we show that the phase transition-induced emergence of plasmonic properties in the crystalline state can markedly change the optical properties of sub-wavelength-thickness, nanostructured GST films, allowing for the realization of non-volatile, reconfigurable (e.g., color-tunable) chalcogenide metasurfaces operating at visible frequencies and creating opportunities for developments in non-volatile optical memory, solid state displays and all-optical switching devices

Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation

The amorphous to crystalline phase transformation of Ge(2)Sb(2)Te(5) (GST) films by UV nanosecond (ns) and femtosecond (fs) single laser pulse irradiation at the same wavelength is compared. Detailed structural information about the phase transformation is collected by x-ray diffraction and high resolution transmission electron microscopy (TEM). The threshold fluences to induce crystallization are determined for both pulse lengths. A large difference between ns and fs pulse irradiation was found regarding the grain size distribution and morphology of the crystallized films. For fs single pulse irradiated GST thin films, columnar grains with a diameter of 20 to 60 nm were obtained as evidenced by cross-sectional TEM analysis. The local atomic arrangement was investigated by high-resolution Cs-corrected scanning TEM. Neither tetrahedral nor off-octahedral positions of Ge-atoms could be observed in the largely defect-free grains. A high optical reflectivity contrast (~25%) between amorphous and completely crystallized GST films was achieved by fs laser irradiation induced at fluences between 13 and 16 mJ/cm(2) and by ns laser irradiation induced at fluences between 67 and 130 mJ/cm(2). Finally, the fluence dependent increase of the reflectivity is discussed in terms of each photon involved into the crystallization process for ns and fs pulses, respectively

Phase-change materials for non-volatile photonic applications

Phase change materials (PCM) provide a unique property combination. Upon the transformation from the amorphous to the crystalline state, their optical properties change drastically. Short optical or electrical pulses can be utilized to switch between these states, making phase change materials attractive for photonic applications. We review recent developments of PCMs and evaluate the potential for all-photonic memories. Towards this goal, the progress as well as existing challenges to realize waveguides with stepwise adjustable transmission is presented. Colour-rendering and nano-pixel displays form another interesting application. Finally, nanophotonic applications based on plasmonic nanostructures are introduced. They provide reconfigurable, non-volatile functionality enabling manipulation and control of light. Requirements and perspectives to successfully implement PCMs in emerging areas of photonics are discussed