Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots

Motion of four-dimensional rigid body around a fixed point: an elementary approach. I

The goal of this note is to give the explicit solution of Euler-Frahm equations for the Manakov four-dimensional case by elementary means. For this, we use some results from the original papers by Schottky [Sch 1891], Koetter [Koe 1892], Weber [We 1878], and Caspary [Ca 1893]. We hope that such approach will be useful for the solution of the problem of $n$-dimensional top.Comment: LaTeX, 9 page

Using a quantum dot as a high-frequency shot noise detector

We present the experimental realization of a Quantum Dot (QD) operating as a high-frequency noise detector. Current fluctuations produced in a nearby Quantum Point Contact (QPC) ionize the QD and induce transport through excited states. The resulting transient current through the QD represents our detector signal. We investigate its dependence on the QPC transmission and voltage bias. We observe and explain a quantum threshold feature and a saturation in the detector signal. This experimental and theoretical study is relevant in understanding the backaction of a QPC used as a charge detector.Comment: 4 pages, 4 figures, accepted for publication in Physical Review Letter

Shot Noise and Full Counting Statistics from Non-equilibrium Plasmons in Luttinger-Liquid Junctions

We consider a quantum wire double junction system with each wire segment described by a spinless Luttinger model, and study theoretically shot noise in this system in the sequential tunneling regime. We find that the non-equilibrium plasmonic excitations in the central wire segment give rise to qualitatively different behavior compared to the case with equilibrium plasmons. In particular, shot noise is greatly enhanced by them, and exceeds the Poisson limit. We show that the enhancement can be explained by the emergence of several current-carrying processes, and that the effect disappears if the channels effectively collapse to one due to, {\em e.g.}, fast plasmon relaxation processes.Comment: 9 pages; IOP Journal style; several changes in the tex

Wave-packet Formalism of Full Counting Statistics

We make use of the first-quantized wave-packet formulation of the full counting statistics to describe charge transport of noninteracting electrons in a mesoscopic device. We derive various expressions for the characteristic function generating the full counting statistics, accounting for both energy and time dependence in the scattering process and including exchange effects due to finite overlap of the incoming wave packets. We apply our results to describe the generic statistical properties of a two-fermion scattering event and find, among other features, sub-binomial statistics for nonentangled incoming states (Slater rank 1), while entangled states (Slater rank 2) may generate super-binomial (and even super-Poissonian) noise, a feature that can be used as a spin singlet-triplet detector. Another application is concerned with the constant-voltage case, where we generalize the original result of Levitov-Lesovik to account for energy-dependent scattering and finite measurement time, including short time measurements, where Pauli blocking becomes important.Comment: 20 pages, 5 figures; major update, new figures and explanations included as well as a discussion about finite temperatures and subleading logarithmic term

Nonequilibrium Green's-Function Approach to the Suppression of Rectification at Metal--Mott-Insulator Interfaces

Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by nonequilibrium Green's functions. The one-dimensional Hubbard model is used for a Mott insulator. The effects of attached metallic electrodes are incorporated into the self-energy. A scalar potential originating from work-function differences and satisfying the Poisson equation is added to the model. For the electron density, we decompose it into three parts. One is obtained by integrating the local density of states over energy to the midpoint of the electrodes' chemical potentials. The others, obtained by integrating lesser Green's functions, are due to the couplings with the electrodes and correspond to an inflow and an outflow of electrons. In Mott insulators, incoming electrons and holes are extended over the whole system, avoiding further accumulation of charge relative to the case without bias. This induces collective charge transport and results in the suppression of rectification.Comment: 18 pages, Figs. 1(b), 2, and 8 replaced. Corrected typo

Integrable matrix equations related to pairs of compatible associative algebras

We study associative multiplications in semi-simple associative algebras over C compatible with the usual one. An interesting class of such multiplications is related to the affine Dynkin diagrams of A, D, E-type. In this paper we investigate in details the multiplications of the A-type and integrable matrix ODEs and PDEs generated by them.Comment: 12 pages, Late

Charge injection instability in perfect insulators

We show that in a macroscopic perfect insulator, charge injection at a field-enhancing defect is associated with an instability of the insulating state or with bistability of the insulating and the charged state. The effect of a nonlinear carrier mobility is emphasized. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect (or contact). Charge injection stops when the field enhancement is screened below criticality. Secondly, the charge slowly redistributes in the bulk. The linear instability mechanism and the final charged steady state are discussed for a simple model and for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators.Comment: Revtex, 7pages, 4 ps figure

Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum

We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observed super-Poissonian shot noise up to values of the Fano factor $\alpha \approx 10$.Comment: 4 pages, 4 figures, accepted for Phys. Rev.