Radiation Monitoring in Mixed Environments at CERN: from the IRRAD6 Facility to the LHC Experiments

RadFET and p-i-n diode semiconductor dosimeters from different manufacturers will be used for radiation monitoring at the Experiments of the CERN LHC accelerator. In this work these sensors were exposed over three months in the CERN-IRRAD6 facility that provides mixed high-energy particles at low rates. The aim was to validate the operation of such sensors in a radiation field where the conditions are close to the ones expected inside full working LHC particle detectors. The results of this long-term irradiation campaign are presented, discussed and compared with measurements by other dosimetric means as well as Monte Carlo simulations. Finally, the integration of several dosimetric devices in one sensor carrier is also presented

Modification of amorphous and microcrystalline silicon film properties after irradiation with MeV and GeV protons

It is well known that the degree of crystallinity has a prominent influence on the stability of Silicon under proton irradiation. Amorphous silicon films are much more stable than mono- or polycrystalline silicon substrates or microcrystalline silicon thin films. In particular it has been shown, that in a micromorph tandem solar cell irradiated with protons in the lower MeV energy range only the microcrystalline diode showed a pronounced decrease in photocurrent after irradiation1. The proton irradiation induced damage in thick crystalline silicon samples has a maximum at beam energies between 1MeV and 4MeV and decreases for further increasing proton energies. However, irradiating an amorphous silicon/crystalline silicon heterojunction solar cell with a relatively dose of 24GeV, we observed a very strong drop in conversion efficiency with only minor recovery after sample annealing. In literature it has been reported 2, that the degradation of amorphous silicon is negligible for proton energies above 100MeV. In order to clarify to which extent also the thin film top layer of the hetero solar cell is affected by the proton irradiation, we exposed a variety of thin film silicon samples either to a 1.7MeV beam with a dose of 5.1012 protons/cm2 or to a 24GeV beam with a dose of 5 .1013 protons/cm2. The investigated intrinsic, p-type and n-type amorphous and microcrystalline silicon films have been deposited by conventional plasma deposition under variation of the silane / hydrogen gas phase ratio. Raman measurements have been done in order to determine the order of crystallinity obtained under various deposition conditions. We observed even at 24GeV a clear modification in the electrical characteristics of the films. Temperature dependent measurements of the dark current revealed in particular for all doped samples a significant increase of the activation energy, that might be explained by a decrease of the dopant efficiency, while for intrinsic a-Si:H layers the increasing activation energy is due to deep defect creation

BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation

BPW34 Commercial p-i-n Diodes for High-level 1-MeV Neutron Equivalent Fluence Monitoring

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Radiation monitoring in mixed environments at CERN: from the IRRAD6 facility to the LHC experiments

RadFET and p-i-n diode semiconductor dosimeters from different manufacturers will be used for radiation monitoring at the Experiments of the CERN LHC accelerator. In this work these sensors were exposed over three months in the CERN-IRRAD6 facility that provides mixed high-energy particles at low rates. The aim was to validate the operation of such sensors in a radiation field where the conditions are close to the ones expected inside full working LHC particle detectors. The results of this long-term irradiation campaign are presented, discussed and compared with measurements by other dosimetric means as well as Monte Carlo simulations. Finally, the integration of several dosimetric devices in one sensor carrier is also presented

Performance studies of an optical-fiber OSL dosimetry system in pulsed high intensity radiation beams

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