Sub 20 nm Short Channel Carbon Nanotube Transistors

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 Volt.Comment: Nano Letters in pres

Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes

The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almost all of the measured SWCNTs showed at least weak gate dependence at room temperature. Large differences in the conductance and breakdown behavior have been found for "normal" semiconducting SWCNTs and small band-gap semiconducting (SGS) SWCNTs.Comment: submitted to Journal of Applied Physic

Application of Graphene within Optoelectronic Devices and Transistors

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in optoelectronic and semiconducting devices. Whereas on one hand, graphene is highly transparent due to its atomic thickness, the material does exhibit a strong interaction with photons. This has clear advantages over existing materials used in photonic devices such as Indium-based compounds. Moreover, the material can be used to 'trap' light and alter the incident wavelength, forming the basis of the plasmonic devices. We also highlight upon graphene's nonlinear optical response to an applied electric field, and the phenomenon of saturable absorption. Within the context of logical devices, graphene has no discernible band-gap. Therefore, generating one will be of utmost importance. Amongst many others, some existing methods to open this band-gap include chemical doping, deformation of the honeycomb structure, or the use of carbon nanotubes (CNTs). We shall also discuss various designs of transistors, including those which incorporate CNTs, and others which exploit the idea of quantum tunneling. A key advantage of the CNT transistor is that ballistic transport occurs throughout the CNT channel, with short channel effects being minimized. We shall also discuss recent developments of the graphene tunneling transistor, with emphasis being placed upon its operational mechanism. Finally, we provide perspective for incorporating graphene within high frequency devices, which do not require a pre-defined band-gap.Comment: Due to be published in "Current Topics in Applied Spectroscopy and the Science of Nanomaterials" - Springer (Fall 2014). (17 pages, 19 figures

“Control-Alt-Delete”: Rebooting Solutions for the E-Waste Problem

A number of efforts have been launched to solve the global electronic waste (e-waste) problem. The efficiency of e-waste recycling is subject to variable national legislation, technical capacity, consumer participation, and even detoxification. E-waste management activities result in procedural irregularities and risk disparities across national boundaries. We review these variables to reveal opportunities for research and policy to reduce the risks from accumulating e-waste and ineffective recycling. Full regulation and consumer participation should be controlled and reinforced to improve local e-waste system. Aiming at standardizing best practice, we alter and identify modular recycling process and infrastructure in eco-industrial parks that will be expectantly effective in countries and regions to handle the similar e-waste stream. Toxicity can be deleted through material substitution and detoxification during the life cycle of electronics. Based on the idea of "Control-Alt-Delete", four patterns of the way forward for global e-waste recycling are proposed to meet a variety of local situations

Graphenic carbon as etching mask: patterning with laser lithography and KOH etching

The wet anisotropic etching process is generally used in the eld of micromachining (MEMS), particularly for commercial products such as accelerometers. Hard masks like oxide or nitride play a key role in the transfer of patterns to the substrate during the lithography process. This work reports on the use of polycrystalline graphenic carbon as an etch mask for wet chemical processing and outlines a simple method to create patterned structures on (100) silicon wafers. Graphenic carbon (GC) was deposited on the silicon substrate by chemical vapor deposition (CVD) using C2H4 as precursor. The desired pattern was written in the spin-coated negative photoresist using UV laser lithography. Dierent geometrical shapes were printed on the substrate with dimensions ranging from 10 to 50 micrometers. In the next stage, the O2 plasma etched away the carbon from the area not covered by the photoresist, acting as an additional mask for this and the subsequent processing steps. Finally, the sample was immersed in the KOH bath saturated with isopropanol and the etching rate was evaluated for each crystal plane. Compared to the use of a sacrificial oxide mask, this technique is simpler and produces more reliable results

Hydrogen evolution activity of individual mono-, bi-, and few-layer MoS2 towards photocatalysis

We investigate the hydrogen evolution activity in the dark and under illumination above the band gap of individual mono-, bi- and few-layer (bulk) MoS2 flakes. We demonstrate that the electrocatalytic activity of 2H-MoS2 immersed in 1 M H2SO4 increases with decreasing number of layers. For monolayers, we observe the highest exchange current density, which is one magnitude larger than in the bulk case. The onset potential scales with the number of layers, which is consistent with a previous report, suggesting that hopping transport across inter-layer barriers within the MoS2 flakes is responsible for this scaling. A specially designed micro-sized catalytic cell enables us to investigate individual MoS2 flakes with well-known geometry and edge-to-surface ratio. Taking these geometric parameters into account, we tentatively attribute the catalytic activity mainly to sulfur vacancies in the basal planes acting as active sites. The associated turn over frequencies (TOF) for mono- and bi-layer MoS2 yield values higher than 103 s−1 at an overpotential of −0.2 V vs. RHE. In view of light driven hydrogen evolution as a means of solar energy conversion, we investigate the photocatalytic activity of few-layer MoS2 under white light illumination