9 research outputs found
Experimental observation of an enhanced anisotropic magnetoresistance in non-local configuration
We compare non-local magnetoresistance measurements in multi-terminal Ni
nanostructures with corresponding local experiments. In both configurations,
the measured voltages show the characteristic features of anisotropic
magnetoresistance (AMR). However, the magnitude of the non-local AMR signal is
up to one order of magnitude larger than its local counterpart. Moreover, the
non-local AMR increases with increasing degree of non-locality, i.e., with the
separation between the region of the main current flow and the voltage
measurement region. All experimental observations can be consistently modeled
in terms of current spreading in a non-isotropic conductor. Our results show
that current spreading can significantly enhance the magnetoresistance signal
in non-local experiments
Giant magnetic anisotropy changes in Sr2CrReO6 thin films on BaTiO3
The integration of ferromagnetic and ferroelectric materials into hybrid
heterostructures yields multifunctional systems with improved or novel
functionality. We here report on the structural, electronic and magnetic
properties of the ferromagnetic double perovskite Sr2CrReO6, grown as epitaxial
thin film onto ferroelectric BaTiO3. As a function of temperature, the
crystal-structure of BaTiO3 undergoes phase transitions, which induce
qualitative changes in the magnetic anisotropy of the ferromagnet. We observe
abrupt changes in the coercive field of up to 1.2T along with resistance
changes of up to 6.5%. These results are attributed to the high sensitivity of
the double perovskites to mechanical deformation.Comment: 3 figure
High-Field Magnetoresistance of Microcrystalline and Nanocrystalline Ni Metal at 3 K and 300 K
The magnetoresistance (MR) and the magnetization isotherms were studied up to
high magnetic fields at T = 3 K and 300 K for a microcrystalline (c) Ni
foil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil. At T = 3
K, for the c-Ni sample with a residual resistivity ratio (RRR) of 331, the
field dependence of the resistivity was similar to what was reported previously
for high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni sample
with RRR = 9 resembled that what was observed at low temperatures for Ni-based
alloys with low impurity concentration. In the magnetically saturated state,
the resistivity increased with magnetic field for both samples at T = 3 K and
the field dependence was dominated by the ordinary MR due to the Lorentz force
acting on the electron trajectories. However, the MR(H) curves were found to be
saturating for c-Ni and non-saturating for nc-Ni, the difference arising
from their very different electron mean free paths. At T = 300 K, the MR(H)
curves of both Ni samples were very similar to those known for bulk Ni. After
magnetic saturation, the resistivity decreased nearly linearly with magnetic
field which behavior is due to the suppression of thermally-induced magnetic
disorder with increasing magnetic field. The MR(H) data were analyzed at both
temperatures with the help of Kohler plots from which the resistivity
anisotropy splitting () and the anisotropic magnetoresistance
(AMR) ratio were derived. It was demonstrated that at T = 300 K,
due to the negligible contribution
of the ordinary MR. The data for the two Ni samples at 3 K and 300 K were found
to indicate an approximately linear scaling of with the
zero-field resistivity. This implies that the AMR ratio does not vary
significantly with temperature in either microstructural state of Ni.Comment: 57 pages, 19 figure
Scaling behavior of the spin pumping effect in ferromagnet/platinum bilayers
We systematically measured the DC voltage V_ISH induced by spin pumping
together with the inverse spin Hall effect in ferromagnet/platinum bilayer
films. In all our samples, comprising ferromagnetic 3d transition metals,
Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH
invariably has the same polarity. V_ISH furthermore scales with the
magnetization precession cone angle with a universal prefactor, irrespective of
the magnetic properties, the charge carrier transport mechanism or type. These
findings quantitatively corroborate the present theoretical understanding of
spin pumping in combination with the inverse spin Hall effect
Scaling behavior of the spin pumping effect in ferromagnet/platinum bilayers
We systematically measured the DC voltage V_ISH induced by spin pumping
together with the inverse spin Hall effect in ferromagnet/platinum bilayer
films. In all our samples, comprising ferromagnetic 3d transition metals,
Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, V_ISH
invariably has the same polarity. V_ISH furthermore scales with the
magnetization precession cone angle with a universal prefactor, irrespective of
the magnetic properties, the charge carrier transport mechanism or type. These
findings quantitatively corroborate the present theoretical understanding of
spin pumping in combination with the inverse spin Hall effect