High-contrast 40 Gb/s operation of a 500 um long silicon carrier-depletion slow wave modulator

This paper was published in OPTICS LETTERS and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OL.37.003504. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law[EN] In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon slow wave modulator based on a traveling-wave Mach¿Zehnder interferometer with two 500 μm long slow wave phase shifters. 40 Gb ∕ s operation with 6.6 dB extinction ratio at quadrature and with an on-chip insertion loss of only 6 dB is shown. These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect.Funding by the European Commission (EC) under project Photonics Electronics Functional Integration on CMOS (HELIOS) (FP7224312) and PROMETEO-2010- 087 R&D Excellency Program are acknowledged. F.Y.G, D.J.T. and G.T.R. acknowledge funding support from the United Kingdom Engineering and Physical Sciences Research Council (EPSRC) under the grant “UK Silicon Photonics”.Brimont, ACJ.; Thomson, DJ.; Gardes, FY.; Fedeli, JM.; Reed, GT.; Martí Sendra, J.; Sanchis Kilders, P. (2012). High-contrast 40 Gb/s operation of a 500 um long silicon carrier-depletion slow wave modulator. Optics Letters. 37(17):3504-3506. https://doi.org/10.1364/OL.37.003504S350435063717Liao, L., Liu, A., Rubin, D., Basak, J., Chetrit, Y., Nguyen, H., … Paniccia, M. (2007). 40 Gbit/s silicon optical modulator for high-speed applications. Electronics Letters, 43(22), 1196. doi:10.1049/el:20072253Gardes, F. Y., Thomson, D. J., Emerson, N. G., & Reed, G. T. (2011). 40 Gb/s silicon photonics modulator for TE and TM polarisations. Optics Express, 19(12), 11804. doi:10.1364/oe.19.011804Thomson, D. J., Gardes, F. Y., Hu, Y., Mashanovich, G., Fournier, M., Grosse, P., … Reed, G. T. (2011). High contrast 40Gbit/s optical modulation in silicon. Optics Express, 19(12), 11507. doi:10.1364/oe.19.011507Brimont, A., Thomson, D. J., Sanchis, P., Herrera, J., Gardes, F. Y., Fedeli, J. M., … Martí, J. (2011). High speed silicon electro-optical modulators enhanced via slow light propagation. Optics Express, 19(21), 20876. doi:10.1364/oe.19.020876Ziebell, M., Marris-Morini, D., Rasigade, G., Fédéli, J.-M., Crozat, P., Cassan, E., … Vivien, L. (2012). 40 Gbit/s low-loss silicon optical modulator based on a pipin diode. Optics Express, 20(10), 10591. doi:10.1364/oe.20.010591Dong, P., Chen, L., & Chen, Y. (2012). High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators. Optics Express, 20(6), 6163. doi:10.1364/oe.20.006163Taylor, H. F. (1999). Enhanced electrooptic modulation efficiency utilizing slow-wave optical propagation. Journal of Lightwave Technology, 17(10), 1875-1883. doi:10.1109/50.793770O’Faolain, L., Beggs, D. M., White, T. P., Kampfrath, T., Kuipers, K., & Krauss, T. F. (2010). Compact Optical Switches and Modulators Based on Dispersion Engineered Photonic Crystals. IEEE Photonics Journal, 2(3), 404-414. doi:10.1109/jphot.2010.2047918Brimont, A., Vicente Galán, J., Maria Escalante, J., Martí, J., & Sanchis, P. (2010). Group-index engineering in silicon corrugated waveguides. Optics Letters, 35(16), 2708. doi:10.1364/ol.35.002708Soref, R., & Bennett, B. (1987). Electrooptical effects in silicon. IEEE Journal of Quantum Electronics, 23(1), 123-129. doi:10.1109/jqe.1987.1073206Nguyen, H. C., Sakai, Y., Shinkawa, M., Ishikura, N., & Baba, T. (2011). 10 Gb/s operation of photonic crystal silicon optical modulators. Optics Express, 19(14), 13000. doi:10.1364/oe.19.013000Dong, P., Liao, S., Liang, H., Qian, W., Wang, X., Shafiiha, R., … Asghari, M. (2010). High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage. Optics Letters, 35(19), 3246. doi:10.1364/ol.35.00324

Silicon slow-light-based photonic mixer for microwave-frequencyconversion applications

This paper was published in OPTICS LETTERS and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OL.37.001721. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law[EN] We describe and demonstrate experimentally a method for photonic mixing of microwave signals by using a silicon electro-optical Mach¿Zehnder modulator enhanced via slow-light propagation. Slow light with a group index of ~11, achieved in a one-dimensional periodic structure, is exploited to improve the upconversion performance of an input frequency signal from 1 to 10.25 GHz. A minimum transmission point is used to successfully demonstrate the upconversion with very low conversion losses of ~7¿¿dB and excellent quality of the received I/Q modulated QPSK signal with an optimum EVM of ~8%.Financial support from FP7-224312 HELIOS project and Generalitat Valenciana under PROMETEO-2010-087 R&D Excellency Program (NANOMET) are acknowledged. F. Y.Gardes, D. J. Thomson, and G. T. Reed are supported by funding received from the UK EPSRC funding body under the grant “UK Silicon Photonics.” The author A. M. Gutiérrez thanks D. Marpaung for his useful help.Gutiérrez Campo, AM.; Brimont, ACJ.; Herrera Llorente, J.; Aamer, M.; Martí Sendra, J.; Thomson, DJ.; Gardes, FY.... (2012). Silicon slow-light-based photonic mixer for microwave-frequencyconversion applications. Optics Letters. 37(10):1721-1723. https://doi.org/10.1364/OL.37.001721S17211723371

Evaluation des projets de télématique routière : contribution des programmes européens "DRIVE" et "4ème PCRD" à la réflexion méthodologique

Ce document a été rédigé par Eric Mouline, du CETE de l’Est, avec des contributions des membres du groupe de suivi CERTU-SETRA. Il s’attache dans un premier temps à définir ce que recouvre le terme évaluation, à préciser quelles sont les différentes « catégories » d’évaluation que l’on peut être amené à conduire, et enfin quelles sont les différentes étapes que l’on rencontre dans tout travail d’évaluation. La suite du document présente les différents apports méthodologiques notables à travers les différents programmes de recherche européens. La méthode d’évaluation socio-économique élaborée lors du projet EVA, très utile quant à la définition de critères d’évaluation « universels » ainsi que la méthode des « 12 ETAPES », ensemble de recommandations facilitant les évaluations nécessitant des essais de terrain, issue du projet FIELD TRIALS, deux projets du programme DRIVE I sont tout d’abord exposées. Le rapport se consacre ensuite à l’étude des travaux menés lors du programme DRIVE II et présente les résultats du projet CORD, qui a élaboré un certain nombre de recommandations adaptées à chacun des thèmes explorés par les projets DRIVE II, ainsi que du projet HOPES, proposant des recommandations utiles à l’appréciation de l’impact des projets en termes de sécurité. Enfin, l’actuel programme cadre de Recherche et Développement est à son tour étudié, et les apports du projet CONVERGE, notamment le guide conçu en 1996 destiné à aider les projets dans leurs tâches d’évaluation, ainsi que de l’étude APAS/ROAD 3 consacrée par la Direction Générale des Transports (DGVII) à l’évaluation sont présentés

Evaluation des projets de télématique routière : contribution des programmes européens "DRIVE" et "4ème PCRD" à la réflexion méthodologique

Ce document a été rédigé par Eric Mouline, du CETE de l’Est, avec des contributions des membres du groupe de suivi CERTU-SETRA. Il s’attache dans un premier temps à définir ce que recouvre le terme évaluation, à préciser quelles sont les différentes « catégories » d’évaluation que l’on peut être amené à conduire, et enfin quelles sont les différentes étapes que l’on rencontre dans tout travail d’évaluation. La suite du document présente les différents apports méthodologiques notables à travers les différents programmes de recherche européens. La méthode d’évaluation socio-économique élaborée lors du projet EVA, très utile quant à la définition de critères d’évaluation « universels » ainsi que la méthode des « 12 ETAPES », ensemble de recommandations facilitant les évaluations nécessitant des essais de terrain, issue du projet FIELD TRIALS, deux projets du programme DRIVE I sont tout d’abord exposées.Le rapport se consacre ensuite à l’étude des travaux menés lors du programme DRIVE II et présente les résultats du projet CORD, qui a élaboré un certain nombre de recommandations adaptées à chacun des thèmes explorés par les projets DRIVE II, ainsi que du projet HOPES, proposant des recommandations utiles à l’appréciation de l’impact des projets en termes de sécurité.Enfin, l’actuel programme cadre de Recherche et Développement est à son tour étudié, et les apports du projet CONVERGE, notamment le guide conçu en 1996 destiné à aider les projets dans leurs tâches d’évaluation, ainsi que de l’étude APAS/ROAD 3 consacrée par la Direction Générale des Transports (DGVII) à l’évaluation sont présentés

Surface/interface engineering of InAs quantum dot edge-emitting diodes toward III-V/SiN photonic integration

We investigate the surface and interface engineering on InAs quantum dot (QD) emitters, by fabricating and measuring a series of edge-emitting light-emitting diodes. These diodes are encapsulated with non-stoichiometric silicon nitride (SiN) layers with various refractive indices. By analysing the optical and electrical characteristics, it is concluded that Si-rich SiN is an excellent candidate for both electrical and optical passisvations with reduced surface recombination. While the N-rich SiN deposited by the same method shows an improved device performance under optical pumping, the passivation does not appear to be as effective under electrical injection. Our findings provide important information related to the surface engineering of the interface between InAs QD stacks and non-stoichiometric SiN materials, which is arguably one of the crucial steps required to establish monolithic integration of InAs QD emitters with CMOS photonics components

Tailoring the Response of Silicon Photonics Devices

Abstract: Shrinking waveguide dimensions in silicon photonics results in a series of performance enhancements, but at some cost. We analyse the waveguide geometry in optical modulators and filters to address some issues associated with this trend. Silicon photonics has experienced rapid development for the last three years and several significant results have been reported, demonstrating the viability of the technology [e.g., 1, 2, 3, 4]. One of the recent trends in silicon photonics has been the reduction of waveguide dimensions. This reduction facilitates tighter bending radii and therefore a smaller device footprint which in turn, significantly reduces the cost. Furthermore, technical performance of many silicon photonic devices is enhanced. However, there are also some issues with this trend to smaller dimensions, notably increased propagation losses, increased polarisation dependence and difficulty in coupling to/from optical fibres. These issues can be overcome with a careful design of the waveguide and device geometry. We have previously shown that by reducing waveguide dimensions, multi-GHz bandwidth optical modulators can be achieved by utilising a horizontal pn junction in a waveguide with an overall height of 450 nm In order to improve the polarisation performance to approach polarisation independence of the modulator, we propose here a modulator with a pn junction that is a V-shape structure, as shown in Highly doped silicon Silicon dioxide Highly doped silicon Highly doped silico

10 Gbit/s error-free DPSK modulation using a push-pull dual-drive silicon modulator

[EN] We experimentally demonstrate a high-speed differential phase shift keying (DPSK) modulation using a silicon push-pull operated dual-drive Mach Zehnder modulator (MZM) based on carrier depletion. 5 Gbit/s and 10 Gbit/s error-free modulation is demonstrated by demodulating the generated DPSK modulated signal using a demodulation circuit based on a polarization delay interferometer through the use of a differential group delay (DGD). Furthermore, the potential for higher DPSK modulation speeds up to 20 Gbit/s is also demonstrated. The obtained results validate the potential to achieve higher order modulation formats, such as quadrature phase shift keying (QPSK), by arranging the MZM in a nested configuration. (C) 2013 Elsevier B.V. All rights reserved.Financial supports from HELIOS (Photonics Electronics Functional Integration on CMOS) FP7-224312 and Generalitat Valenciana under PROMETEO-2010-087 R&D Excellency Program (NANOMET) are acknowledged. M. Aamer and P. Sanchis thank Dr. Javier Herrera for his useful help. D.J. Thomson, F.Y. Gardes and G.T. Reed are supported by funding received from the UK EPSRC funding body under the grant “UK Silicon Photonics”.Aamer, M.; Thomson, DJ.; Gutiérrez Campo, AM.; Brimont, ACJ.; Gardes, FY.; Reed, GT.; Fedeli, JM.... (2013). 10 Gbit/s error-free DPSK modulation using a push-pull dual-drive silicon modulator. Optics Communications. 304:107-110. https://doi.org/10.1016/j.optcom.2013.04.051S10711030

Status of the light ion source developments at CEA/Saclay

ACC NIMInternational audienceSILHI (High Intensity Light Ion Source) is an ECR ion source producing high intensity proton ordeuteron beams at 95 keV. It is now installed in the IPHI site building, on the CEA/Saclay center. IPHI is a frontend demonstrator of high power accelerator. The source regularly delivers more than 130 mA protons in CWmode and already produced more than 170 mA deuterons in pulsed mode at nominal energy. The last beamcharacterisations, including emittance measurements, space charge compensation analysis and diagnosticimprovements, will be reported. Taking into account the SILHI experience, new developments are in progress tobuild and test a 5 mA deuteron source working in CW mode. This new source will also operate at 2.45 GHz andpermanent magnets will provide the magnetic configuration. This source, of which the design will be discussed,will have to fit in with the SPIRAL 2 accelerator developed at GANIL to produce Radioactive Ion Beams. TheH- test stand status is briefly presented here and detailed in companion papers.This work is partly supported by the European Commission under contract n°: HPRI-CT-2001-50021