4,709 research outputs found

    Grandparents and contact: 'rights v welfare' revisited

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    This article examines the legal position of members of the extended family involved in contact (access) disputes and locates the discussion within the debate about the utility of rights in resolving such disputes. In particular it focuses on Article 8 of the European Convention on Human Rights and also refers to the jurisprudence of the US Supreme Court

    The Development of Buffalo

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    Digital Showcase in the Library: How Trace Enhances UT\u27s Virtual Library

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    UT’s Virtual Library Steering Committee is charged to enhance the library’s virtual presence through efficient searching capabilities, interactive features, archiving services, tools for discovery and delivery of scholarly resources, and new technologies that advance and scale services. Trace supports all of these enhancements as UT’s digital showcase. Trace is an evolving concept defined by and for UT’s user communities to promote local and global research. Its services are collaborative, discoverable, contextual, and scale from a single item to data sets in multiple formats. As Trace nears the end of its first year, we’re excited to offer more contributions to the virtual library services, such as conference hosting

    Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1–x alloys

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    The nitrogen bonding configurations in GaNxAs1–x alloys grown by molecular beam epitaxy with 0.07=0.03, the nitrogen is found to exist in a single bonding configuration – the Ga–N bond; no interstitial nitrogen complexes are present. The amount of nitrogen in the alloys is estimated from the XPS using the N 1s photoelectron and Ga LMM Auger lines and is found to be in agreement with the composition determined by x-ray diffraction

    Origin of the n-type conductivity of InN: the role of positively charged dislocations

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    As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm–3) with increasing film thickness (from 50 to 12 000 nm). The combination of background donors from impurities and the extreme electron accumulation at InN surfaces is shown to be insufficient to reproduce the measured film thickness dependence of the free-electron density. When positively charged nitrogen vacancies (VN+) along dislocations are also included, agreement is obtained between the calculated and experimental thickness dependence of the free-electron concentration

    Cryptographic controls: the heart of cyber security

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