Threshold voltage and space charge in organic transistors

We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift is due to space-charge transferred from the contacts, and can be modeled quantitatively without free fitting parameters, using Poisson's equation, and by assuming that the density of states in rubrene is that of a conventional inorganic semiconductor. Our results demonstrate the consistency, at the quantitative level, of a variety of recent experiments on rubrene crystals, and show how the use of FET measurements can enable the determination of microscopic parameters (e.g., the effective mass of charge carriers).Comment: 4 pages, 4 figure

Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously. We exploit this property to estimate the bandgap {\Delta} of monolayer MoS2 directly from the device transfer curves and find {\Delta} $\approx$ 2.4-2.7 eV. In the ambipolar injection regime, we observe electroluminescence due to exciton recombination in MoS2, originating from the region close to the hole-injecting contact. Both the observed transport properties and the behavior of the electroluminescence can be consistently understood as due to the presence of defect states at an energy of 250-300 meV above the top of the valence band, acting as deep traps for holes. Our results are of technological relevance, as they show that devices with useful optoelectronic functionality can be realized on large-area MoS2 monolayers produced by controllable and scalable techniques

Storage and retrieval of light pulses in atomic media with "slow" and "fast" light

We present experimental evidence that light storage, i.e. the controlled release of a light pulse by an atomic sample dependent on the past presence of a writing pulse, is not restricted to small group velocity media but can also occur in a negative group velocity medium. A simple physical picture applicable to both cases and previous light storage experiments is discussed.Comment: 4 pages, 3 figures, submitted to Physical Review Letter

Inhibition of electromagnetically induced absorption due to excited state decoherence in Rb vapor

The explanation presented in [Taichenachev et al, Phys. Rev. A {\bf 61}, 011802 (2000)] according to which the electromagnetically induced absorption (EIA) resonances observed in degenerate two level systems are due to coherence transfer from the excited to the ground state is experimentally tested in a Hanle type experiment observing the parametric resonance on the $$ line of $^{87}$Rb. While EIA occurs in the $F=1\to F^{\prime}=2$ transition in a cell containing only $Rb$ vapor, collisions with a buffer gas ($30 torr$ of $Ne$) cause the sign reversal of this resonance as a consequence of collisional decoherence of the excited state. A theoretical model in good qualitative agreement with the experimental results is presented.Comment: 8 pages, 7 figures, submitted to Physical Review

Progress in organic single-crystal field-effect transistors

Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations, and, more generally, the intrinsic transport properties of organic semiconductors. These topics are now being investigated through the study of transport in organic transistors realized using molecular single crystals of unprecedented chemical purity and structural quality. These studies are elucidating detailed microscopic aspects of the physics of organic semiconductors and corresponding devices and have also led to unforeseen high values for carrier mobility in these materials. Here, we discuss developments in this area and present a brief outlook on future goals that have come into experimental reac

Temporal build-up of electromagnetically induced transparency and absorption resonances in degenerate two-level transitions

The temporal evolution of electromagnetically induced transparency (EIT) and absorption (EIA) coherence resonances in pump-probe spectroscopy of degenerate two-level atomic transition is studied for light intensities below saturation. Analytical expression for the transient absorption spectra are given for simple model systems and a model for the calculation of the time dependent response of realistic atomic transitions, where the Zeeman degeneracy is fully accounted for, is presented. EIT and EIA resonances have a similar (opposite sign) time dependent lineshape, however, the EIA evolution is slower and thus narrower lines are observed for long interaction time. Qualitative agreement with the theoretical predictions is obtained for the transient probe absorption on the $^{85}Rb$ $D_{2}$ line in an atomic beam experiment.Comment: 10 pages, 9 figures. Submitted to Phys. Rev.

Single-Crystal Organic Charge-Transfer Interfaces probed using Schottky-Gated Heterostructures

Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is commonly invoked to explain the phenomenon, the details of the process and the nature of the interfacial charge carriers remain largely unexplored. Here we use Schottky-gated heterostructures to probe the conducting layer at the interface between rubrene and PDIF-CN2 single crystals. Gate-modulated conductivity measurements demonstrate that interfacial transport is due to electrons, whose mobility exhibits band-like behavior from room temperature to ~ 150 K, and remains as high as ~ 1 cm2V-1s-1 at 30 K for the best devices. The electron density decreases linearly with decreasing temperature, an observation that can be explained quantitatively based on the heterostructure band diagram. These results elucidate the electronic structure of rubrene-PDIF-CN2 interfaces and show the potential of Schottky-gated organic heterostructures for the investigation of transport in molecular semiconductors.Comment: 37 pages, 9 Figures (including supplementary information

Tuning the charge transfer in Fx-TCNQ/rubrene single-crystal interfaces

Interfaces formed by two different organic semiconductors often exhibit a large conductivity, originating from transfer of charge between the constituent materials. The precise mechanisms driving charge transfer and determining its magnitude remain vastly unexplored, and are not understood microscopically. To start addressing this issue, we have performed a systematic study of highly reproducible single-crystal interfaces based on rubrene and Fx-TCNQ, a family of molecules whose electron affinity can be tuned by increasing the fluorine content. The combined analysis of transport and scanning Kelvin probe measurements reveals that the interfacial charge carrier density, resistivity, and activation energy correlate with the electron affinity of Fx-TCNQ crystals, with a higher affinity resulting in larger charge transfer. Although the transport properties can be described consistently and quantitatively using a mobility-edge model, we find that a quantitative analysis of charge transfer in terms of single-particle band diagrams reveals a discrepancy ~ 100 meV in the interfacial energy level alignment. We attribute the discrepancy to phenomena known to affect the energetics of organic semiconductors, which are neglected by a single-particle description, such as molecular relaxation and band-gap renormalization due to screening. The systematic behavior of the Fx-TCNQ/rubrene interfaces opens the possibility to investigate these phenomena experimentally, under controlled conditions

Very low bias stress in n-type organic single crystal transistors

Bias stress effects in n-channel organic field-effect transistors (OFETs) are investigated using PDIF-CN2 single-crystal devices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2 devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ~1% under vacuum and ~10% in air. This remarkable stability of the devices leads to characteristic time constants, extracted by fitting the data with a stretched exponential - that are \tau ~ 2\cdot10^9 s in air and \tau ~ 5\cdot10^9 s in vacuum - approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.Comment: Submitted to Applied Physics Letters; 14 pages, 3 figure