Studies on salinity tolerance and acclimatization of some commercially important seaweeds

Studies were made on salinity tolerance and acclimatization of 13 economically important red, brown and green algae at different salinities ranging from 5 to 55%. Caulerpa rocemosa degenerated after 3 days in all these salinities. Hypnea valentiae tolerated a wide saliniiy range of 15 to 45% and Gracilaria crassa and Acanthophora spicifera from 15 to 55%. All other algae tolerated only 25 and 35%. Experiments conducted on salinity acclimatization showed that A.spicifera could be acclimatized at the salinities from 55 to 15% and all other algae from 55 to 25% except C. racemosa

Effect of growth promoters on the onshore culture of Gracilaria edulis (Gmelin) Silva

Culture of agar yielding red alga Gracilaria edulis was carried out in fibreglass tanks by providing running seawater and aeration under a shed with transparent roof. The seed material was pretreated for 12 hours at different concentrations of growth promoters IAA, IBA, GA, Ascorbic acid, EDTA and Inositol. In general, more increase in growth and biomass was obtained in the plants pretreated with lower concentrations of these growth promoters

Seasonal changes in growth, biochemical constituents and phycocolloid of some marine algae of Mandapam coast

Seasonal variation in growth and biochemical constituents such as protein, carbohydrate and lipid in Hypnea valentiae, Acanthophora spicifera, Laurencia papillosa, Enteromorpha compressa, Ulva lactuca and Caulerpa recemosa were observed for one year from April, 1995 to March 1996. Carrageenan content was estimated from H. valentiae, A. spicifera and L. papillosa. In general, peak growth and biomass of these algae occurred during the period June -August and January - March. The maximum values in these algae varied from 12.5 to 13.2% for protein, 13.0 to 13.3% for carbohydrate and 10.3 to 12.0% for lipid. The yield of phycocolloid recorded 11.3%, 6.0% and 8.1% in H. valentiae, A. spicifera and L. papillosa respectively

Not Available

Not AvailableStudies were made on salinity tolerance and acclimatization of 13 economically important red, brown and green algae at different salinities ranging from 5 to 55%. Caulerpa rocemosa degenerated after 3 days in all these salinities. Hypnea valentiae tolerated a wide saliniiy range of 15 to 45% and Gracilaria crassa and Acanthophora spicifera from 15 to 55%. All other algae tolerated only 25 and 35%. Experiments conducted on salinity acclimatization showed that A.spicifera could be acclimatized at the salinities from 55 to 15% and all other algae from 55 to 25% except C. racemosa.Not Availabl

Not Available

Not AvailableCulture of agar yielding red alga Gracilaria edulis was carried out in fibreglass tanks by providing running seawater and aeration under a shed with transparent roof. The seed material was pretreated for 12 hours at different concentrations of growth promoters IAA, IBA, GA, Ascorbic acid, EDTA and Inositol. In general, more increase in growth and biomass was obtained in the plants pretreated with lower concentrations of these growth promoters.Not Availabl

Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle ∼ 1×10−4 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as x-ray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation

Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle ∼ 1×10−4 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as x-ray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation