Charge storage characteristics of gold nanoparticles embedded in alumina matrix

The processes of charge accumulation in the nonvolatile memory metal-oxidesilicon capacitors with gold nanoparticles floating gate formed by the pulsed laser deposition method are investigated. The regularities of formation of alumina films with gold nanoparticles are the result of their deposition from the back flow of low-energy particles from the erosion torch. With removing from the torch axis, sizes of gold particles and the film thickness decreased. When recording the capacitance-voltage curves, the capture of a negative charge was observed. It was shown that the concentration of gold nanoparticles in alumina matrix and the thickness of nanocomposite films remarkably influenced on the stored charge. The observed flat band voltage shift was in the range 1 to 14 V. To explain the peculiarities of charge storage in the composite films, the electron transport through them was investigated

Electron Field Emission from Undoped and Doped DLC Films

Electron field emission and electrical conductivity of undoped and nitrogen doped DLC films have been investigated. The films were grown by the PE CVD method from CH{sub 4}:H{sub 2} and CH{sub 4}:H{sub 2}:N{sub 2} gas mixtures, respectively. By varying nitrogen content in the gas mixture over the range 0 to 45%, corresponding concentrations of 0 to 8 % (atomic) could be achieved in the films. Three different gas pressures were used in the deposition chamber: 0.2, 0.6 and 0.8 Torr. Emission current measurements were performed at approximately 10{sup -6} Torr using the diode method with emitter-anode spacing set at 20 {micro}m. The current - voltage characteristics of the Si field electron emission arrays covered with DLC films show that threshold voltage (V{sub th}) varies in a complex manner with nitrogen content. As a function of nitrogen content, V{sub th} initially increases rapidly, then decreases and finally increases again for the highest concentration. Corresponding Fowler-Nordheim (F-N) plots follow F-N tunneling over a wide range. The F-N plots were used for determination of the work function, threshold voltage, field enhancement factor and effective emission area. For a qualitative explanation of experimental results, we treat the DLC film as a diamond-like (sp{sup 3} bonded) matrix with graphite-like inclusions

Comments on the continuing widespread and unnecessary use of a defective emission equation in field emission related literature

Field electron emission (FE) has relevance in many different technological contexts. However, many related technological papers use a physically defective elementary FE equation for local emission current density (LECD). This equation takes the tunneling barrier as exactly triangular, as in the original FE theory of 90 years ago. More than 60 years ago, it was shown that the so-called Schottky-Nordheim (SN) barrier, which includes an image-potential-energy term (that models exchange-and-correlation effects) is better physics. For a metal-like emitter with work-function 4.5 eV, the SN-barrier-related Murphy-Good FE equation predicts LECD values that are higher than the elementary equation values by a large factor, often between around 250 and around 500. By failing to mention/apply this 60-year-old established science, or to inform readers of the large errors associated with the elementary equation, many papers (aided by defective reviewing) spread a new kind of "pathological science", and create a modern research-integrity problem. The present paper aims to enhance author and reviewer awareness by summarizing relevant aspects of FE theory, by explicitly identifying the misjudgment in the original 1928 Fowler-Nordheim paper, by explicitly calculating the size of the resulting error, and by showing in detail why most FE theoreticians regard the 1950s modifications as better physics. Suggestions are made, about nomenclature and about citation practice, that may help to diminish misunderstandings.Comment: Submitted for publication; in v2 a correction to historical information (with no numerical consequences) has been made in Appendix

Синтез и свойства фторсодержащих комплексных солей с элементоорганических анионом

Описан синтез комплексной соли типа N+(C2H5)4[Si (C6H5)3F2]-, которая может использоваться в качестве электролита для литиевых химических источников ток

Синтез та властивості флуорвмісних комплексних солей з елементорганічним аніоном

Описан синтез комплексной соли типа N+(C2H5)4[Si (C6H5)3F2]-, которая может использоваться в качестве электролита для литиевых химических источников токаОписано синтез комплексної солі типу N+(C2H5)4[Si (C6H5)3F2]-, яка може використовуватись як електроліт для літієвих хімічних джерел струм