Gluino production in ultrarelativistic heavy ion collisions and nuclear shadowing

In this article we investigate the influence of nuclear effects in the production of gluinos in nuclear collisions at the LHC, and estimate the transverse momentum dependence of the nuclear ratios $R_{pA} = {\frac{d\sigma (pA)}{dy d^2 p_T}} / A {\frac{d\sigma (pp)}{dy d^2 p_T}}$ and $R_{AA} = {\frac{d\sigma (AA)}{dy d^2 p_T}} / A^2 {\frac{d\sigma (pp)}{dy d^2 p_T}}$. We demonstrate that depending on the magnitude of the nuclear effects, the production of gluinos could be enhanced, compared to proton-proton collisions. The study of these observables can be useful to determine the magnitude of the shadowing and antishadowing effects in the nuclear gluon distribution. Moreover, we test different SPS scenarios, corresponding to different soft SUSY breaking mechanisms, and find that the nuclear ratios are strongly dependent on that choice.Comment: 7 pages, 5 figures; results and discussions changed/added. Accepted for publication in Physical Review

Resonant Raman scattering of ZnS_xSe_1-x solid solutions:role of S and Se electronic states

A combined theoretical and experimental study of the enhancement in the Raman mode intensities of ZnSSe compounds, under various resonant conditions, is presented, leading to more detailed insights into the role of chalcogen electronic states in the photon–matter interaction.</p

The Myosin Va Head Domain Binds to the Neurofilament-L Rod and Modulates Endoplasmic Reticulum (ER) Content and Distribution within Axons

The neurofilament light subunit (NF-L) binds to myosin Va (Myo Va) in neurons but the sites of interaction and functional significance are not clear. We show by deletion analysis that motor domain of Myo Va binds to the NF-L rod domain that forms the NF backbone. Loss of NF-L and Myo Va binding from axons significantly reduces the axonal content of ER, and redistributes ER to the periphery of axon. Our data are consistent with a novel function for NFs as a scaffold in axons for maintaining the content and proper distribution of vesicular organelles, mediated in part by Myo Va. Based on observations that the Myo Va motor domain binds to intermediate filament (IF) proteins of several classes, Myo Va interactions with IFs may serve similar roles in organizing organelle topography in different cell types

Resonant Raman scattering of ZnS_xSe_1-x solid solutions:role of S and Se electronic states

A comprehensive Raman resonance scattering study of ZnSxSe1-x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been made using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of the LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of the Se vibrations. This behavior is explained with the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed with first principle simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds

Caracterización de películas delgadas de CdTe crecidas a partir de CdTesinterizado en forma de pastilla

Se depositaron películas delgadas de CdTe a partir de pastilla mediante la técnica de transporte de vapor en espacio cerrado con pared caliente (CSVT-HW). La caracterización óptica (mediante espectroscopía fotoacústica) y estructural (Difracción de Rayos X) demuestran la calidad de las películas obtenidas

Data analytics diffusion in the UK renewable energy sector: an innovation perspective

International audienceWe introduce the BDA dynamics and explore the associated applications in renewable energy sector with a focus on data-driven innovation. Our study draws on the exponential growth of renewable energy initiatives over the last decades and on the paucity of literature to illustrate the use of BDA in the energy industry. We conduct a qualitative field study in the UK with stakeholder interviews and analyse our results using thematic analysis. Our findings indicate that no matter if the importance of the energy sector for ‘people’s well- being, industrial competitiveness, and societal advancement, old fashioned approaches to analytics for organisational processes are currently applied widely within the energy sector. These are triggered by resistance to change and insuicient organisational knowledge about BDA, hindering innovation opportunities. Furthermore, for energy organisations to integrate BDA approaches, they need to deal with challenges such as training employees on BDA and the associated costs. Overall, our study provides insights from practitioners about adopting BDA innovations in the renewable energy sector to inform decision-makers and provide recommendations for future researc

High efficiency Cu2ZnSnSe4:In doped based solar cells

IEEE 42nd Photovoltaic Specialist Conference (PVSC), New Orleans, LA, JUN 14-19, 2015International audienceIn this work we investigate the indium doping of CZTSe thin films. For this purpose, CZTSe was synthesized by a sequential process with different nominal In concentrations ranging from 0 to 2.6x10(20) at/cm(3). Absorbers and devices were characterized using XRF, PL, TOF-SIMS, SEM, J-V AM1.5 illuminated curves, EQE and CV. Results suggest the formation of In-Sn defects, which have a negligible impact on the carrier concentration of the absorber due to the deep character of the level introduced by this defect. This leads also to the presence of a new PL band. The main effect of the doping is reflected in changes on the morphology, where the increasing indium concentration leads to a deterioration of the absorber quality. Efficiencies in the range of 7-7.5% were obtained for In concentrations below 2.6x10(19) at/cm(3). This suggests that CZTSe is very tolerant to In doping, and high efficiency devices are obtained even with high In concentrations. A defect model based on the experimental results will be presented, explaining the apparently innocuous effect of In doping on the CZTSe electro-optical properties to a certain concentration

Optical and electrical properties of In-doped Cu2ZnSnSe4

International audienceCu2ZnSnSe4 (CZTSe) is a very promising material as absorber layer for low cost and earth abundant thin film solar cells. Currently in this technology we can find indium in different layers, including the transparent window layer In2O3:SnO2 (ITO), and the In2S3/CdS double emitter, both used in high efficiency devices. Therefore, during devices fabrication processes, In could be a potential contaminant and consequently, it is very interesting to investigate its possible impact in the solar cells performance. Besides this, a key factor in the control of material properties lies in the doping. Extrinsic doping has been barely studied for CZTSe and among the possible doping elements, In is one of the most interesting candidates, because it has the possibility to occupy either Sn or Cu/Zn positions. In this work we investigate the indium doping of CZTSe thin films. For this purpose, CZTSe was synthesized by a sequential process with different nominal In concentrations ranging from 0 to 2.6 x 10(20) cm(-3). We demonstrate that In is uniformly introduced in CZTSe, not affecting the main elements distribution, but impacting in the Na quantity at the surface. Drastic changes on the morphology are observed, where the increasing indium concentration leads to the formation of a bilayer structure. Efficiencies in the range of 7-7.5% or 8.5-9.2% were obtained for In concentrations below 2.6 x 10(19) cm(-3) for pure CZTSe and CZTSe:Ge respectively, decreasing for further doping levels mainly due to the deterioration of the fill factor, while the other optoelectronic parameters are less affected. We propose a phenomenological model supported by the complete electrical characterization of the material and devices, showing that a conductive phase deteriorates the properties of the system that we associate to the possible presence of mixed Sn-oxides and In-oxides. (C) 2016 Elsevier B.V. All rights reserved