A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence

A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime

Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence

A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime

Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs

The ambipolar diffusion length and carrier lifetime are measured in AlxGa1−xAs for several mole fractions in the interval 0<x<0.38. These parameters are found to have significantly higher values in the higher mole fraction samples. These increases are attributed to occupation of states in the indirect valleys, and supporting calculations are presented

Characteristics of ferroelectric-ferroelastic domains in N{\'e}el-type skyrmion host GaV4_4S8_8

GaV$_4$S$_8$ is a multiferroic semiconductor hosting N{\'e}el-type magnetic skyrmions dressed with electric polarization. At T$_s$ = 42K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below T$_s$, ferroelectric domains are formed with the electric polarization pointing along any of the four $\left< 111 \right>$ axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the N{\'e}el-type skyrmion lattice emerging below T$_C$=13\:K, the characteristics of polar domains in GaV$_4$S$_8$ have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV$_4$S$_8$ using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 $\mu$m. We expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manupulation of N{\'e}el-type skyrmions

Study of Magnetic Properties of A_2B^'NbO_6 (A=Ba,Sr, (BaSr): and B^'=Fe and Mn) double perovskites

We have studied the magnetic properties of Ba_2FeNbO_6 and Ba_2MnNbO_6. it is seen that Ba_2FeNbO_6 is an antiferromagnet with a weak ferromagnetic behaviour at 5K while Ba_2MnNbO_6 shows two magnetic transitions one at 45 K and the other at 12K. Electron spin resonance (ESR) measurements at room temperature show that the Mn compound does not show any Jahn-Teller distortion. It is also seen that the Neel temperature of the A_2FeNbO_6 (A=Ba,Sr, BaSr) compounds do not vary significantly. However variations in the average A-site ionic radius influence the formation of short range correlations that persist above T_N.Comment: 10 oages, 5 figures, MMM, to appear in J.Appl.Phy

Synthesis, Characterization, and Thermoelectric Properties of Radical Siloxanes

More than half of the annual energy consumption in the United States is lost as waste heat. Polymer-based thermoelectric devices have the potential to utilize this waste heat both sustainably and cost-effectively. Although conjugated polymers currently dominate research in organic thermoelectrics, the potential of using polymers with radical pendant groups have yet to be realized. These polymers have been found to be as conductive as pristine (i.e., not doped) poly(3-hexylthiophene) (P3HT), a commonly-used charge-transporting conjugated polymer. This could yield promising avenues for thermoelectric material design as radical polymers are more synthetically tunable and are hypothesized to have a high Seebeck coefficient. In this report, the compound 4,4,5,5-tetramethyl-2-(3-vinylphenyl)imidazolidine-1,3-diol was synthesized and then used to produce a polymer with a radical pendant group. A polysiloxane backbone was synthetically targeted to produce a material with a low glass transition temperature. The polymer is then characterized for its material and thermoelectric properties

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.Comment: 11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev.

Can Limit State Design be used to Design a Pipeline Above 80% SMYS?’, OMAE

ABSTRACT This paper contains the results of a preliminary study, undertaken by C-FER and Andrew Palmer and Associates, for BP Exploration, to demonstrate the feasibility of utilizing limit states design procedures for the design of large diameter, onshore pipelines in remote areas. The objective of the study was to determine if a higher design factor can be justified than that currently specified for such a region; specifically if an increase in the basic design factor, F, from approximately 0.72 to 0.85 could be justified, thereby allowing the pipeline wall thickness to be reduced and a substantial weight saving to be achieved. The work included reliability analyses for three limit state failure scenarios: burst of undamaged pipelines, burst of corroded pipelines and burst of pipelines containing dents and gouges. Results presented show: (1) the calculated probability of rupture for a new pipe (i.e., with no damage, corrosion or other forms of deterioration); (2) the probabilities of failure for pipes containing corrosion or dent/gouge defects; and (3) the effects of a higher design pressure for each limit states scenario. The paper discusses the results, comments on the feasibility of justifying higher design factors and discusses the importance of an appropriate pipeline maintenance management system for monitoring and controlling structural integrity for the full life of a pipeline