'Institute of Electrical and Electronics Engineers (IEEE)'
Abstract
A new technique for determining carrier diffusion lengths
in direct gap semiconductors by cathodoluminescence measurement
is presented. Ambipolar diffusion lengths are
determined for GaAs quantum well material, bulk GaAs,
and Al_xGa_(1-x)As with x up to 0.38. A large increase in
the diffusion length is found as x approaches 0.38 and is
attributed to an order of magnitude increase in lifetime