Stable branching rules for classical symmetric pairs

We approach the problem of obtaining branching rules from the point of view of dual reductive pairs. Specifically, we obtain a stable branching rule for each of 10 classical families of symmetric pairs. In each case, the branching multiplicities are expressed in terms of Littlewood-Richardson coefficients. Some of the formulas are classical and include, for example, Littlewood's restriction rule as a special case.Comment: 26 page

High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron system on a hydrogen-passivated Si(111) surface. This vacuum cavity preserves the ambient sensitive surface and is created via room temperature contact bonding of two Si substrates. Hall measurements are made on the H-Si(111) surface prepared in aqueous ammonium fluoride solution. We obtain electron densities up to $6.5 \times 10^{11}$ cm$^{-2}$ and peak mobilities of $\sim 8000$ cm$^{2}$/V s at 4.2 K.Comment: to appear in Applied Physics Letter

Broadband Tuning (170nm) of InGaAs Quantum Well Lasers

The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned

Therapists\u27 use of the graded repetitive arm supplementary program (GRASP) intervention: A practice implementation survey study

The aims of this study were: (1) to explore the extent of practice implementation of GRASP in the United Kingdom; (2) using an implementation framework, to explore UK therapists\u27 opinions of implementing GRASP; and (3) if GRASP is found to be used in the United Kingdom, to investigate differences in opinions between therapists who are using GRASP in practice and those who are not

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.Comment: 4 pages, 4 figures, to appear in Physical Review Letter

A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence

A new technique for determining carrier diffusion lengths in direct gap semiconductors by cathodoluminescence measurement is presented. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, and Al_xGa_(1-x)As with x up to 0.38. A large increase in the diffusion length is found as x approaches 0.38 and is attributed to an order of magnitude increase in lifetime