193 research outputs found
Electron states of mono- and bilayer graphene on SiC probed by STM
We present a scanning tunneling microscopy (STM) study of a
gently-graphitized 6H-SiC(0001) surface in ultra high vacuum. From an analysis
of atomic scale images, we identify two different kinds of terraces, which we
unambiguously attribute to mono- and bilayer graphene capping a C-rich
interface. At low temperature, both terraces show
quantum interferences generated by static impurities. Such interferences are a
fingerprint of -like states close to the Fermi level. We conclude that the
metallic states of the first graphene layer are almost unperturbed by the
underlying interface, in agreement with recent photoemission experiments (A.
Bostwick et al., Nature Physics 3, 36 (2007))Comment: 4 pages, 3 figures submitte
Electron-Phonon Coupling in Highly-Screened Graphene
Photoemission studies of graphene have resulted in a long-standing
controversy concerning the strength of the experimental electron-phonon
interaction in comparison with theoretical calculations. Using high-resolution
angle-resolved photoemission spectroscopy we study graphene grown on a copper
substrate, where the metallic screening of the substrate substantially reduces
the electron-electron interaction, simplifying the comparison of the
electron-phonon interaction between theory and experiment. By taking the
nonlinear bare bandstructure into account, we are able to show that the
strength of the electron-phonon interaction does indeed agree with theoretical
calculations. In addition, we observe a significant bandgap at the Dirac point
of graphene.Comment: Submitted to Phys. Rev. Lett. on July 20, 201
Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene
We report results from two-dimensional Raman spectroscopy studies of
large-area epitaxial graphene grown on SiC. Our work reveals unexpectedly large
variation in Raman peak position across the sample resulting from inhomogeneity
in the strain of the graphene film, which we show to be correlated with
physical topography by coupling Raman spectroscopy with atomic force
microscopy. We report that essentially strain free graphene is possible even
for epitaxial graphene.Comment: 10 pages, 3 figure
Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
We investigate the magnetotransport properties of quasi-free standing
epitaxial graphene bilayer on SiC, grown by atmospheric pressure graphitization
in Ar, followed by H intercalation. At the charge neutrality point the
longitudinal resistance shows an insulating behavior, which follows a
temperature dependence consistent with variable range hopping transport in a
gapped state. In a perpendicular magnetic field, we observe quantum Hall states
(QHSs) both at filling factors () multiple of four (), as
well as broken valley symmetry QHSs at and . These results
unambiguously show that the quasi-free standing graphene bilayer grown on the
Si-face of SiC exhibits Bernal stacking.Comment: 12 pages, 5 figure
Symmetry Breaking in Few Layer Graphene Films
Recently, it was demonstrated that the quasiparticle dynamics, the
layer-dependent charge and potential, and the c-axis screening coefficient
could be extracted from measurements of the spectral function of few layer
graphene films grown epitaxially on SiC using angle-resolved photoemission
spectroscopy (ARPES). In this article we review these findings, and present
detailed methodology for extracting such parameters from ARPES. We also present
detailed arguments against the possibility of an energy gap at the Dirac
crossing ED.Comment: 23 pages, 13 figures, Conference Proceedings of DPG Meeting Mar 2007
Regensburg Submitted to New Journal of Physic
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