Structural And Optical Properties Of n-Type and p-Type GaAs(1−x)Bix Thin Films Grown By Molecular Beam Epitaxy On (311)B GaAs Substrates

In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction, micro-Raman at room temperature, and photoluminescence (PL) measurements as a function of temperature and laser excitation power (PEXC) were performed to investigate their structural and optical properties. X-ray diffraction results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Bi-related defects in n- and p-doped GaAsBi alloys have important impact on the differences of their optical properties

Завдання бaластування транспортної баржі під час прийому важкого вантажу

The ballasting problem of the transport barge during the heavy-weight cargo reception has been considered. The mathematical model of the reception process is designed. The optimality criteria are given and the optimal control problem of the process is formulated.Рассмотрена задача балластировки транспортной баржи при приеме на нее тяжеловесных грузов. Построена математическая модель процесса приема груза. Приведены критерии оптимальности и сформулирована задача оптимального управления процессом.Розглянуто задачу баластування транспортної баржі при прийомі на неї великовагових вантажів. Побудовано математичну модель процесу прийому вантажу. Наведено критерії оптимальності і сформульовано задачу оптимального управління процесом

Mössbauer Synchrotron and X-ray Studies of Ultrathin YFeO3 Films

The YFeO3 orthoferrite is one of the most promising materials for antiferromagnetic (AFM) spintronics. Most studies have dealt with bulk samples, while the thin YFeO3 films possess unusual and variable properties. Ultrathin (3–50 nm) YFeO3 films have been prepared by magnetron sputtering on the r-plane (1 1¯ 0 2)-oriented Al2O3 substrates (r-Al2O3). Their characterization was undertaken by the Mössbauer reflectivity method using a Synchrotron Mössbauer Source and by X-ray diffraction (XRD) including grazing incidence diffraction (GI-XRD). For thin films with different thicknesses, the spin reorientation was detected under the application of the magnetic field of up to 3.5 T. Structural investigations revealed a predominant orthorhombic highly textured YFeO3 phase with (00l) orientation for relatively thick (>10 nm) films. Some inclusions of the Y3Fe5O12 garnet (YIG) phase as well as a small amount of the hexagonal YFeO3 phase were detected in the Mössbauer reflectivity spectra and by XRD

Mössbauer Synchrotron and X-ray Studies of Ultrathin YFeO₃ Films

The YFeO3 orthoferrite is one of the most promising materials for antiferromagnetic (AFM) spintronics. Most studies have dealt with bulk samples, while the thin YFeO3 films possess unusual and variable properties. Ultrathin (3–50 nm) YFeO3 films have been prepared by magnetron sputtering on the r-plane (1 1¯ 0 2)-oriented Al2O3 substrates (r-Al2O3). Their characterization was undertaken by the Mössbauer reflectivity method using a Synchrotron Mössbauer Source and by X-ray diffraction (XRD) including grazing incidence diffraction (GI-XRD). For thin films with different thicknesses, the spin reorientation was detected under the application of the magnetic field of up to 3.5 T. Structural investigations revealed a predominant orthorhombic highly textured YFeO3 phase with (00l) orientation for relatively thick (>10 nm) films. Some inclusions of the Y3Fe5O12 garnet (YIG) phase as well as a small amount of the hexagonal YFeO3 phase were detected in the Mössbauer reflectivity spectra and by XRD