Current distribution in a parallel configuration superconducting strip-line detector

Superconducting detectors based on parallel microscopic strip-lines are promising candidates for single molecule detection in time-of-flight mass spectrometry. The device physics of this configuration is complex. In this letter, we employ nano-optical techniques to study the variation of current density, count rate, and pulse amplitude transversely across the parallel strip device. Using the phenomenological London theory, we are able to correlate our results to a non-uniform current distribution between the strips, governed by the London magnetic penetration depth. This fresh perspective convincingly explains anomalous behaviour in large area parallel superconducting strip-line detectors reported in previous studies

Integrated Joule switches for the control of current dynamics in parallel superconducting strips

Understanding and harnessing the physics of the dynamic current distribution in parallel superconducting strips holds the key to creating next generation sensors for single molecule and single photon detection. Non-uniformity in the current distribution in parallel superconducting strips leads to low detection efficiency and unstable operation, preventing the scale up to large area sensors. Recent studies indicate that non-uniform current distributions occurring in parallel strips can be understood and modeled in the framework of the generalized London model. Here we build on this important physical insight, investigating an innovative design with integrated superconducting-to-resistive Joule switches to break the superconducting loops between the strips and thus control the current dynamics. Employing precision low temperature nano-optical techniques, we map the uniformity of the current distribution before- and after the resistive strip switching event, confirming the effectiveness of our design. These results provide important insights for the development of next generation large area superconducting strip-based sensors

Dynamics of nonequilibrium quasiparticles in a double superconducting tunnel junction detector

We study a class of superconductive radiation detectors in which the absorption of energy occurs in a long superconductive strip while the redout stage is provided by superconductive tunnel junctions positioned at the two ends of the strip. Such a device is capable both of imaging and energy resolution. In the established current scheme, well studied from the theoretical and experimental point of view, a fundamental ingredient is considered the presence of traps, or regions adjacent to the junctions made of a superconducting material of lower gap. We reconsider the problem by investigating the dynamics of the radiation induced excess quasiparticles in a simpler device, i.e. one without traps. The nonequilibrium excess quasiparticles can be seen to obey a diffusion equation whose coefficients are discontinuous functions of the position. Based on the analytical solution to this equation, we follow the dynamics of the quasiparticles in the device, predict the signal formation of the detector and discuss the potentiality offered by this configuration.Comment: 16 pages, 5 figures Submitted to Superconducting Science and Technolog

Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors

We measured the single-photon detection efficiency of NbN superconducting single photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~5% at 488 nm to ~30% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For lossy NbN films, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, we find that the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~70% can be reached for a detector on Si or GaAs, without the need for an optical cavity.Comment: 15 pages, 5 figures, submitted to Journal of Applied Physic

Superconductor to resistive state switching by multiple fluctuation events in NbTiN nanostrips

We report on measurements of the switching current distributions on two-dimensional superconducting NbTiN strips that are 5 nm thick and 80 nm wide. We observe that the width of the switching current distributions has a non-monotonous temperature dependence, where it is constant at the lowest temperatures up to about 1.5 K, after which it increases with temperature until 2.2 K. Above 2.5 K any increase in temperature decreases the distribution width which at 4.0 K is smaller than half the width observed at 0.3 K. By using a careful analysis of the higher order moments of the switching distribution, we show that this temperature dependence is caused by switching due to multiple fluctuations. We also find that the onset of switching by multiple events causes the current dependence of the switching rate to develop a characteristic deviation from a pure exponential increase, that becomes more pronounced at higher temperatures, due to the inclusion of higher order terms

Y-Ba-Cu-O Nanostripes for Optical Photon Detection

Nanowires of Y-Ba-Cu-O, with the thickness of 50 nm and the width ranging from 90 nm to 500 nm have been successfully grown on lanthanum aluminate substrates for photon detection experiments. The nanowires were up to 10-mu m long and formed a meander structure, covering the area of up to 30x10 mu m(2) with a fill factor of 50%. The samples were excited using optical laser pulses at a 1550 nm wavelength and resulting photoresponse signals were measured as a function of both temperature and normalized bias current. Presence of two, distinct regimes in the photoresponse temperature dependence has been clearly evidenced, suggesting different physical mechanisms of the signal formation. Presented experimental results shed new light on prospects of implementation of high-temperature superconducting oxides in photon detection and counting

Investigation of Superconducting Molybdenum Silicide Nanostrips and Microstrips for Single Photon Detectors

Superconducting nanostrip single photon detectors have emerged as the highest performing single-photon detectors; however, the possibility to use superconducting microstrip as single photon detectors is very appealing both to use them as larger areas detectors and for an easier technology in the manufacturing. The aim of this work is to test the photoresponse in liquid helium dewar of 9 nm thick MoSi covered with a very thin (2 nm) layer of Al, in two different configurations: nanomeanders and microstrips. We demonstrate that MoSi/Al microstrips can work as photodetectors also at T = 4.2 K. We also compare the dark count rate of the microstrip and the nanowire, confirming the lower noise for the microstrips also at 4.2 K

Investigation of dark count rate in NbRe microstrips for single photon detection

Superconducting microstrip single photon detectors (SMSPDs) received great interest since they are expected to combine the excellent performance of superconducting nanostrip single photon detectors with the possibility to cover large active areas using low-cost fabrication techniques. In this work, we fabricated SMSPDs based on NbRe to investigate the role of vortices in the dark counts events in this innovative material and in devices with micrometer size. We realized devices with different layouts, namely single microstrips and pairs of parallel microstrips. The energy barriers related to the motion of single vortices or vortex-antivortex pairs, responsible of detection events, have been determined and compared with the ones of similar devices based on different materials, such as MoSi, WSi and NbN. The analysis confirms the high potential of NbRe for the realization of superconducting single photon detectors with large areas

Investigation of Dark Counts in Innovative Materials for Superconducting Nanowire Single-photon Detector Applications

The phenomenon of dark counts in nanostripes of different superconductor systems such as high-temperature superconducting YBa2Cu3O7-x and superconductor/ferromagnet hybrids consisting of either NbN/NiCu or YBa2Cu3O7- x/L0.7Sr0.3MnO3 bilayers have been investigated. For NbN/NiCu the rate of dark-count transients have been reduced with respect to pure NbN nanostripes and the events were dominated by a single vortex entry from the edge of the stripe. In the case of nanostripes based on YBa2Cu3O7-x, we have found that thermal activation of vortices was also, apparently, responsible for triggering dark-count signals

Superconducting nano-strip particle detectors

We review progress in the development and applications of superconducting nano-strip particle detectors. Particle detectors based on superconducting nano-strips stem from the parent devices developed for single photon detection (SSPD) and share with them ultra-fast response times (sub-nanosecond) and the ability to operate at a relatively high temperature (2–5 K) compared with other cryogenic detectors. SSPDs have been used in the detection of electrons, neutral and charged ions, and biological macromolecules; nevertheless, the development of superconducting nano-strip particle detectors has mainly been driven by their use in time-of-flight mass spectrometers (TOF-MSs) where the goal of 100% efficiency at large mass values can be achieved. Special emphasis will be given to this case, reporting on the great progress which has been achieved and which permits us to overcome the limitations of existing mass spectrometers represented by low detection efficiency at large masses and charge/mass ambiguity. Furthermore, such progress could represent a breakthrough in the field. In this review article we will introduce the device concept and detection principle, stressing the peculiarities of the nano-strip particle detector as well as its similarities with photon detectors. The development of parallel strip configuration is introduced and extensively discussed, since it has contributed to the significant progress of TOF-MS applications