Silicon implantation in GaAs

The electrical properties of room-temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7×10^13 to 1.7×10^15 cm^–2. The implanted samples were annealed with silicon nitride encapsulants in H2 atmosphere for 30 min at temperatures ranging from 800 to 900°C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low-dose implants, high (~90%) electrical activation of the implanted ions is achieved and the depth distribution of the free-electron concentration in the implanted layer roughly follows a Gaussian. However, for high-dose implants, the activation is poor (<15% for a 900 °C anneal) and the electron concentration profile is flat and deeper than the expected range

Laser pulse annealing of ion-implanted GaAs

GaAs single-crystals wafers are implanted at room temperature with 400-keV Te + ions to a dose of 1×10^15 cm^–2 to form an amorphous surface layer. The recrystallization of this layer is investigated by backscattering spectrometry and transmission electron microscopy after transient annealing by Q-switched ruby laser irradiation. An energy density threshold of about 1.0 J/cm^2 exists above which the layer regrows epitaxially. Below the threshold the layer is polycrystalline; the grain size increases as the energy density approaches threshold. The results are analogous to those reported for the elemental semiconductors, Si and Ge. The threshold value observed is in good agreement with that predicted by the simple model successfully applied previously to Si and Ge

Application of regulatory sequence analysis and metabolic network analysis to the interpretation of gene expression data

We present two complementary approaches for the interpretation of clusters of co-regulated genes, such as those obtained from DNA chips and related methods. Starting from a cluster of genes with similar expression profiles, two basic questions can be asked: 1. Which mechanism is responsible for the coordinated transcriptional response of the genes? This question is approached by extracting motifs that are shared between the upstream sequences of these genes. The motifs extracted are putative cis-acting regulatory elements. 2. What is the physiological meaning for the cell to express together these genes? One way to answer the question is to search for potential metabolic pathways that could be catalyzed by the products of the genes. This can be done by selecting the genes from the cluster that code for enzymes, and trying to assemble the catalyzed reactions to form metabolic pathways. We present tools to answer these two questions, and we illustrate their use with selected examples in the yeast Saccharomyces cerevisiae. The tools are available on the web (http://ucmb.ulb.ac.be/bioinformatics/rsa-tools/; http://www.ebi.ac.uk/research/pfbp/; http://www.soi.city.ac.uk/~msch/)

Brief Communication: Early season snowpack loss and implications for oversnow vehicle recreation travel planning

Oversnow vehicle recreation contributes to rural economies but requires a minimum snow depth to mitigate negative impacts on the environment. Daily snow water equivalent (SWE) observations from weather stations in the Lake Tahoe region (western USA) and a SWE reanalysis product are used to estimate the onset dates of SWE corresponding to ∼30&thinsp;cm in snow depth (SWEmin). Since 1985, median SWEmin onset has shifted later by approximately 2 weeks. Potential proximal causes of delayed onset are investigated; rainfall is increasing during October–January with dry days becoming warmer and more frequent. Adaptation strategies to address oversnow vehicle management challenges in recreation travel planning are explored.</p

Physical Conditions of Fast Glacier Flow 2:Variable Extent of Anisotropic Ice and Soft Basal Sediment From Seismic Reflection Data Acquired on Store Glacier, West Greenland

Outlet glaciers of the Greenland Ice Sheet transport ice from the interior to the ocean and contribute directly to sea level rise because because discharge and ablation often exceed the accumulation. To develop a better understanding of these fast flowing glaciers, we investigate the basal conditions of Store Glacier, a large outlet glacier flowing into Uummannaq Fjord in West Greenland. We use two crossing seismic profiles acquired near the centreline, 30 km upstream of the calving front, to interpret the physical nature of the ice and bed. We identify one notably englacial and two notably subglacial seismic reflections on both profiles. The englacial reflection represents a change in crystal orientation fabric, interpreted to be the Holocene?Wisconsin transition. From Amplitude Versus Angle (AVA) analysis we infer that the deepest ?80 m of ice of the parallel-flow profile below this reflection is anisotropic with an enhancement of simple shear of ?2. The ice is underlain by ?45 m of unconsolidated sediments, below which there is a strong reflection caused by the transition to consolidated sediments. In the across-flow profile subglacial properties vary over small scale and the polarity of the ice?bed reflection switches from positive to negative. We interpret these as patches of different basal slipperiness associated with variable amounts of water. Our results illustrate variability in basal properties, and hence ice-bed coupling, at a spatial scale of ?100 m, highlighting the need for direct observations of the bed to improve the basal boundary conditions in ice-dynamic modelspublishersversionPeer reviewe