Cross-over from retro to specular Andreev reflections in bilayer graphene

Ongoing experimental progress in the preparation of ultra-clean graphene/superconductor (SC) interfaces enabled the recent observation of specular interband Andreev reflections (AR) at bilayer graphene (BLG)/NbSe$_{2}$ van der Waals interfaces [Nature Physics 12, (2016)]. Motivated by this experiment we theoretically study the differential conductance across a BLG/SC interface at the continuous transition from high to ultra-low Fermi energies $E_{F}$ in BLG. Using the Bogoliubov-deGennes equations and the Blonder-Tinkham-Klapwijk formalism we derive analytical expressions for the differential conductance across the BLG/SC interface. We find a characteristic signature of the cross-over from intra-band retro- (high $E_{F}$) to inter-band specular (low $E_{F}$) ARs, that manifests itself in a strongly suppressed interfacial conductance when the excitation energy $|\varepsilon |=|E_{F}|<\Delta$ (the SC gap). The sharpness of these conductance dips is strongly dependent on the size of the potential step at the BLG/SC interface $U_{0}$

Electronic transport in locally gated graphene nanoconstrictions

We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with local tunable transmission and characterized their electronic properties. An order of magnitude enhanced gate efficiency is achieved adopting the local gate geometry with thin dielectric gate oxide. A complete turn off of the device is demonstrated as a function of the local gate voltage. Such strong suppression of device conductance was found to be due to both quantum confinement and Coulomb blockade effects in the constricted graphene nanostructures.Comment: 3 pages 3 figures; separated and expanded from arXiv:0705.3044v

Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene $p$-$n$-$p$ junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the $p$ and $n$ regions. These fractional plateaus, originating from chiral edge states equilibration at the $p$-$n$ interfaces, exhibit sensitivity to inter-edge backscattering which is found to be strong for some of the plateuas and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.Comment: 4 pages 4 figures, to appear in Phys. Rev. Lett. Original version arXiv:0705.3044v1 was separated and expanded to this current version and arXiv:0709.173

Towards inducing superconductivity into graphene

Graphenes transport properties have been extensively studied in the 10 years since its discovery in 2004, with ground-breaking experimental observations such as Klein tunneling, fractional quantum Hall effect and Hofstadters butterfly. Though, so far, it turned out to be rather poor on complex correlated electronic ground states and phase transitions, despite various theoretical predictions. The purpose of this thesis is to help understanding the underlying theoretical and experimental reasons for the lack of strong electronic interactions in graphene, and, employing graphenes high tunability and versatility, to identify and alter experimental parameters that could help to induce stronger correlations. In particular graphene holds one last, not yet experimentally discovered prediction, namely exhibiting intrinsic superconductivity. With its vanishingly small Fermi surface at the Dirac point, graphene is a semi-metal with very weak electronic interactions. Though, if it is doped into the metallic regime, where the size of the Fermi surface becomes comparable to the size of the Brillouin zone, the density of states becomes sizeable and electronic interactions are predicted to be dramatically enhanced, resulting in competing correlated ground states such as superconductivity, magnetism and charge density wave formation. Following these predictions, this thesis first describes the creation of metallic graphene at high carrier doping via electrostatic doping techniques based on electrolytic gates. Due to graphenes surface only properties, we are able to induce carrier densities above n>10¹⁴cm⁻²(εF>1eV) into the chemically inert graphene. While at these record high carrier densities we yet do not observe superconductivity, we do observe fundamentally altered transport properties as compared to semi-metallic graphene. Here, detailed measurements of the low temperature resistivity reveal that the electron-phonon interactions are governed by a reduced, density dependent effective Debey temperature - the so-called Bloch-Grüneisen temperature ΘBG. We also probe the transport properties of the high energy sub-bands in bilayer graphene by electrolyte gating. Furthermore we demonstrate that electrolyte gates can be used to drive intercalation reactions in graphite and present an all optical study of the reaction kinetics during the creation of the graphene derived graphite intercalation compound LiC₆, and show the general applicability of the electrolyte gates to other 2-dimensional materials such as thin films of complex oxides, where we demonstrate gating dependent conductance changes in the spin-orbit Mott insulator Sr₂IrO₄. Another, entirely different approach to induce superconducting correlations into graphene is by bringing it into proximity to a superconductor. Although not intrinsic to graphene, Cooper pairs can leak in from the superconductor and exist in graphene in the form of phase-coherent electron-hole states, the so-called Andreev states. Here we demonstrate a new way of fabricating highly transparent graphene/superconductor junctions by vertical stacking of graphene and the type-II van der Waals superconductor NbSe₂. Due to NbSe₂'s high upper critical field of Hc₂= 4 T we are able to test a long proposed and yet not well understood regime, where proximity effect and quantum Hall effect coexist

Multiband Transport in Bilayer Graphene at High Carrier Densities

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples at carrier densities $|n|\geq2.4\times 10^{13}$ cm$^{-2}$. We observe a sudden increase of resistance and the onset of a second family of Shubnikov de Haas (SdH) oscillations as these high energy subbands are populated. From simultaneous Hall and magnetoresistance measurements together with SdH oscillations in the multiband conduction regime, we deduce the carrier densities and mobilities for the higher energy bands separately and find the mobilities to be at least a factor of two higher than those in the low energy bands

Graphene-based Josephson junction single photon detector

We propose to use graphene-based Josephson junctions (gJjs) to detect single photons in a wide electromagnetic spectrum from visible to radio frequencies. Our approach takes advantage of the exceptionally low electronic heat capacity of monolayer graphene and its constricted thermal conductance to its phonon degrees of freedom. Such a system could provide high sensitivity photon detection required for research areas including quantum information processing and radio-astronomy. As an example, we present our device concepts for gJj single photon detectors in both the microwave and infrared regimes. The dark count rate and intrinsic quantum efficiency are computed based on parameters from a measured gJj, demonstrating feasibility within existing technologies.Comment: 11 pages, 6 figures, and 1 table in the main tex

Twisted Bilayer Graphene IV. Exact Insulator Ground States and Phase Diagram

We derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4)$\times$U(4) symmetry, and we find that the exact ground states at integer filling $-4\le \nu\le 4$ relative to charge neutrality are Chern insulators of Chern numbers $\nu_C=4-|\nu|,2-|\nu|,\cdots,|\nu|-4$, all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find $\nu=0,\pm2$ has exact ground states of Chern number $0$, while $\nu=\pm1,\pm3$ has perturbative ground states of Chern number $\nu_C=\pm1$, which are U(4) ferromagnetic. In the chiral-nonflat limit with a different U(4) symmetry, different Chern number states are degenerate up to second order perturbations. In the realistic nonchiral-nonflat case, we find that the perturbative insulator states with Chern number $\nu_C=0$ ($0<|\nu_C|<4-|\nu|$) at integer fillings $\nu$ are fully (partially) intervalley coherent, while the insulator states with Chern number $|\nu_C|=4-|\nu|$ are valley polarized. However, for $0<|\nu_C|\le4-|\nu|$, the fully intervalley coherent states are highly competitive (0.005meV/electron higher). At nonzero magnetic field $|B|>0$, a first-order phase transition for $\nu=\pm1,\pm2$ from Chern number $\nu_C=\text{sgn}(\nu B)(2-|\nu|)$ to $\nu_C=\text{sgn}(\nu B)(4-|\nu|)$ is expected, which agrees with recent experimental observations. Lastly, the TBG Hamiltonian reduces into an extended Hubbard model in the stabilizer code limit.Comment: 17+35 pages, 3+2 figures. Published versio

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers