Electron-Spin Precession in Dependence of the Orientation of the External Magnetic Field

Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (θ) of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function ofθare obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electrong-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed

Spin- and energy relaxation of hot electrons at GaAs surfaces

The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution of Boltzmann-type kinetic equations allows one to obtain quantitative results for spin relaxation in semiconductors that go beyond the original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results using surface sensitive two-photon photoemission techniques show that the spin relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface is several times longer than the corresponding bulk spin relaxation-times. A theoretical explanation of these results in terms of the reduced density of holes in the band-bending region at the surface is presented.Comment: 33 pages, 12 figures; earlier submission replaced by corrected and expanded version; eps figures now included in the tex

Photo-Induced Spin Dynamics in Semiconductor Quantum Wells

We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (PPL) with and without magnetic field is studied. ThePPLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,PPLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field

Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic Field

The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane’s dispersion law in a magnetic fieldBparallel to the wire axis has been calculated as a function of the radius of the wire and magnitude ofB, using a variational approach. It is shown that when wire radius is less than the Bohr radius of the impurity, the nonparabolicity of dispersion law of charge carriers leads to a considerable increase of the binding energy in the magnetic field, as well as to a more rapid growth of binding energy with growth ofB

A unified theory of the Elliott-Yafet and the D’yakonov-Perel’ spin-relaxation mechanisms

We present a unified treatment of the Elliott-Yafet (EY) and the D’yakonov-Perel’ (DP) spin-relaxation mechanisms using the Mori-Kawasaki formula, which gives the spin-relaxation rate to lowest order in the spin-orbit coupling (SOC) but to infinite order in the quasi-particle scattering rate

Octave-wide photonic band gap in three-dimensional plasmonic Bragg structures and limitations of radiative coupling

Radiative coupling between oscillators is one of the most fundamental subjects of research in optics, where particularly a Bragg-type arrangement is of interest and has already been applied to atoms and excitons in quantum wells. Here we explore this arrangement in a plasmonic structure. We observe the emergence of an octave-wide photonic band gap in the optical regime. Compared with atomic or excitonic systems, the coupling efficiency of the particle plasmons utilized here is several orders of magnitude larger and widely tunable by changing the size and geometry of the plasmonic nanowires. We are thus able to explore the regime where the coupling distance is even limited by the large radiative decay rate of the oscillators. This Bragg-stacked coupling scheme will open a new route for future plasmonic applications such as far-field coupling to quantum emitters without quenching, plasmonic cavity structures and plasmonic distributed gain schemes for spasers

Novel magneto-optic layers based on semiconductor nanostructures for Kerr microscopy.

Symposium on Magneto-Optical Materials for Photonics and Recording held at the 2004 MRS Fall Meeting, Boston, MA, NOV 29-DEC 29, 2004International audienceA novel type of magneto-optic layers based on CdMnTe quantum wells is used to image the magnetic flux pattern at the surface of type I superconductors. The magneto-optic layer is designed as an anti-reflecting optical cavity. The quantum wells are arranged in a Bragg structure and placed at maxima of the electric field in the cavity in order to enhance Faraday rotation