Comparative study: the effect of annealing conditions on the properties of P3HT:PCBM blends

This paper presents a detailed study on the role of various annealing treatments on organic poly(3-hexylthiophene) and [6]-phenyl-C61-butyric acid methyl ester blends under different experimental conditions. A combination of analytical tools is used to study the alteration of the phase separation, structure and photovoltaic properties of the P3HT:PCBM blend during the annealing process. Results showed that the thermal annealing yields PCBM ‘‘needle-like’’ crystals and that prolonged heat treatment leads to extensive phase separation, as demonstrated by the growth in the size and quantity of PCBM crystals. The substrate annealing method demonstrated an optimal morphology by eradicating and suppressing the formation of fullerene clusters across the film, resulting in longer P3HT fibrils with smaller diameter. Improved optical constants, PL quenching and a decrease in the P3HT optical bad-gap were demonstrated for the substrate annealed films due to the limited diffusion of the PCBM molecules. An effective strategy for determining an optimized morphology through substrate annealing treatment is therefore revealed for improved device efficiency.Web of Scienc

Efficient P3HT:PCBM bulk heterojunction organic solar cells; effect of post deposition thermal treatment

Organic solar cells based on P3HT:PCBM bulk heterojunction were prepared and subjected to post annealing at different temperatures (100, 120, 140, 160 and 180 °C). SEM, AFM as well as optical images have revealed that post deposition heat treatment has induced significant phase segregation between P3HT and PCBM which were found to result in growth of PCBM clusters on the films surface. The P3HT:PCBM absorption spectra were found to be blue shifted by 7 nm in films subjected to heat treatment at 160 °C and 180 °C. XRD data show a single diffraction peak at 2θ = 5.33 ± 0.23o for P3HT:PCBM films and was attributed to the edge-on arrangement of the (100) plane. Space charge limited conduction theory was employed to determine the charge carrier mobility; the highest obtained mobility was obtained for devices with active layers heat-treated at 140 °C. The change in the barrier height was derived from dark I–V. The variation in the metal–semiconductor contact between the Al electrode and P3HT:PCBM active layer were addressed and the barrier height has increased to form hole blocking contact and the ideality factor has decreased implying a decrease in the recombination rate. A direct relation between Fermi level, Vbi, and Voc was studied. Efficient device performance was ascribed to P3HT:PCBM layers which were subjected to post deposition heat treatment at 140 °C with PCE = 5.5 %, FF = 65.6 %, Jsc = 12.9 mA cm−2 and Voc = 0.65 V