Surface evaluation InP substrates by Raman scattering

International audienc

Surface evaluation InP substrates by Raman scattering

International audienc

RESPECTIVE ROLES OF IMPURITIES AND DEFECTS IN Al/Ga INTERDIFFUSION IN ION IMPLANTED GaAs-AlxGa1-xAs SUPERLATTICES

L'influence des défauts d'implantation, séparés des effets associés aux charges des impuretés, a été étudiée sur l'interdiffusion d'Al/Ga dans des superréseaux (SR) GaAs-Al0. 3Ga0.7As. L'implantation des éléments isoélectroniques 31P+ et 27Al+ ont été effectués dans des SR à deux températures (25°C et 250°C) dans le but d'obtenir différentes densités de défauts pour chaque élément. Les propriétés de ces structures, avant et après recuits à 850°C durant 6 h, ont été évaluées à l'aide de plusieurs techniques d'analyses. Ainsi, nous avons mis en évidence la dépendance d'interdiffusion sur la densité des défauts et la durée de leur recuit.The influence of implant damage, seperated from impurity change associated effects, has been investigated on Al/Ga interdiffusion. Implants of electrically inactive isoelectronic elements 31P+ and 27Al+ were performed in molecular beam epitaxy grown (MBE) GaAs-Al0.3Ga0.7As superlattices (SLs) at two distinct temperatures (25°C and 250°C) to generate different damage densities. Their properties, before and after anneals at 850°C for periods up to 6 h, were evaluated using several characterization techniques. An unambiguous evidence to the implant damage and anneal duration dependent Al/Ga interdiffusion is presented and discussed

GaNAsSb : How does it compare with other dilute III-V nitride alloys ?

International audienceGrowth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III-N-V alloys. Similar properties are observed including very high bandgap bowing, carrier localization at low temperature, sensitivity to thermal annealing and passivation of N-related electronic states by hydrogen. On the other hand, we point out some features of this alloy system and evaluate its potential for device applications. Probably, GaNAsSb can achieve emission at longer wavelengths than GaInNAs alloys grown to date. Its conduction- and valence-band offsets can be independently tuned by adjusting the N and Sb composition, respectively. Since this compound has a single group III element, its electronic structure should be less dependent on alloy configuration than GaInNAs

Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

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