Prediction of Betavoltaic Battery Output Parameters Based on SEM Measurements

The approach for the prediction of betavoltaic battery output parameters based on EBIC investigations of semiconductor converters of beta-radiation energy into electric power is presented. Using this approach the parameters of battery based on porous Si are calculated. These parameters are compared with those of battery based on a planar Si p-n junction

Prediction of Betavoltaic Battery Output Parameters Based on SEM Measurements

The approach for the prediction of betavoltaic battery output parameters based on EBIC investigations of semiconductor converters of beta-radiation energy into electric power is presented. Using this approach the parameters of battery based on porous Si are calculated. These parameters are compared with those of battery based on a planar Si p-n junction

Effect of mesoscopic inhomogeneities on the critical current of bulk melt-textured YBCO

The downsizing 211-inclusions and an increase of their density leads to rise in mean critical current value in Y-based melt textured material. Very often 211-inclusion are spread in the material volume non-homogeneous, with typical scale 50 - 100 micrometer. Therefore it is difficult to find the real correlation between local critical current and the inclusions distribution. We performed a study of a local critical current using modified magneto-optic technique on a melt-textured YBaCuO ceramic, found the areas with constant current and studied the real structure of the material in the areas, inclusions distribution and their sizes, by scanning electron microscopy and X-ray microanalysis. The estimation of a pinning in these places, by taking into account the amount of inclusions and the length of their boundaries, and comparison with the value of local critical current reveals a strait correlation between the density of inclusions and the current but shows remarkable quantitative disagreement.Comment: PDF (8 pages, 4 figures

Dislocation-Point Defect Interaction Effect on Local Electrical Properties of Semiconductors

The results of investigations of dislocation effect on the Si electrical and optical properties have been reviewed. The important role of dislocation-point defect interaction in the formation of dislocation properties has been demonstrated. A short review of recent investigations of clean dislocation properties has been presented. The results of investigations of dislocation related defect spatial distribution including dislocation slip planes have been discussed. The mechanisms of dislocation electrical activity formation have been analyzed

NEW POSSIBILITIES OF EBIC FOR DISLOCATION STUDY

The recent results of the EBIC investigations of dislocations in Si demonstrating the influence of point defect atmospheres on the characteristics of the EBIC contrast of the both charged and uncharged dislocations are discussed. It is shown that from such investigations characteristics of these atmospheres can be obtained

EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe

The EBIC and remote contact EBIC (REBIC) techniques have been used to reveal grain boundaries and precipitates in CdTe crystals and to study their recombination contrast as a function of the electron beam parameters and temperature. The results obtained are discussed taking into account the defect charge state and the recombination properties of their environment

ASYMMETRY OF ISOLATED DISLOCATIONS MOBILITY IN Ge AND Si SINGLE CRYSTALS

La variation de la vitesse des dislocations provoquée par l'inversion du signe de la contrainte de cisaillement appliquée a été étudiée dans Ge et Si en fonction de la température, de la contrainte et des conditions de traitement thermique. Les résultats obtenus sont discutés en prenant en compte l'influence de la dissociation des dislocations et de l'interaction dislocations-défauts ponctuels sur la formation et le développement des doubles décrochements.Change of dislocation velocities in Ge and Si caused by inversion of applied shear stress sign has been investigated as a function of temperature, stresses and thermal treatment conditions. The results obtained are discussed with account of the influence of dislocation splitting and dislocation-point defects interaction on the double kinks formation and extension

INVESTIGATION OF ELECTRICAL PROPERTY INHOMOGENEITIES FORMED BY PLASMA ETCHING

The possibility to use reactive ion etched Si crystals doped with gold as a model object for diffusion length profile reconstruction from the EBIC measurements has been discussed. It has been shown that the results of profile reconstruction from the EBIC measurements correlate well with the recombination center profiles obtained by DLTS

COMPUTER PROCESSING OF EBIC SIGNALS

Some aspects of the use of computational methods are studied for quantitative EBIC measurements. It is investigated the problem of the determination of the bulk distribution of the diffusion length. Both parametric and nonparametric approaches are considered