PyOX-ligands: the asymmetric Henry reaction

Abstract: C 2 -dissymmetric PyOX-ligands have been applied to the asymmetric Henry reaction. This widely applicable reaction is easy to perform, requires no inert atmospheres or dry solvents, and gives good selectivities. By adjusting ligand side-chains, a significant impact on selectivities was observed

Ligand creation via linking - a rapid and convenient method for construction of novel supported PyOX-ligands

A novel supported amino alcohol linker was synthesized and utilized for attachment of picolinic acid derivatives onto different supports. When the resin bound molecule was further activated, the PyOX-moiety could be constructed reliably in enantiopure form. Furthermore, an efficient Pd-catalyzed modification of a picolinic acid derivative is presented.Peer reviewe

Synthesis of a novel carboxy functionalized PyOX-ligand

A short and convenient synthesis of a carboxy functionalized PyOX-core is presented. The carboxy functionality offers a wide variety of possibilities for further modification. In this paper, the core is functionalized with a mercapto tail.Peer reviewe

Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films

The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels. Time of flight secondary ion mass spectroscopy depth profiling shows a significant amount of silicon out-diffusion from the substrate and aluminum in-diffusion towards the oxide. By using titanium nitride as the electrode, the silicon out-diffusion is suppressed, which improves the device performance. This indicates that, despite the larger coordination number of the lanthanum ions in the oxide, aluminum acts as a sink for silicon, thus driving the out-diffusion of silicon

TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

We provide the first report of the structural and electrical properties of TiN/ZrO2/Ti/Al metal-insulator-metal capacitor structures, where the ZrO2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage (C-V) and current-voltage (I-V) characteristics are reported for premetallization rapid thermal annealing (RTP) in N-2 for 60 s at 400 degrees C, 500 degrees C, or 600 degrees C. For the RTP at 400 degrees C, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of I V and low capacitance equivalent thickness values of similar to 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO2 is 31 +/- 2 after RTP treatment at 400 degrees C

TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

We provide the first report of the structural and electrical properties of TiN/ZrO 2 /Ti/Al metal-insulator-metal capacitor structures, where the ZrO 2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage ( C - V ) and current-voltage ( I - V ) characteristics are reported for premetallization rapid thermal annealing (RTP) in N 2 for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO 2 is 31 plusmn 2 after RTP treatment at 400degC

Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O

Atomic layer deposition of Hf-Si-O and Hf O2 using Hf Cl4, Si Cl4, and H2 O was studied. The growth per cycle and composition of Hf-Si-O films were analyzed as a function of the growth temperature, the pulse sequence, and the precursor doses. The growth of Hf-Si-O from Hf Cl4 Si Cl4 H2 O appeared to be determined not only by the -OH density but also by the -OH bonding mode. The Hf Cl4 Si Cl4 H2 O chemistry results in carbon-free films with low chlorine impurity content. The Hf-Si-O films of Hf-rich composition are meeting the leakage-current requirements for 45 nm technology node and below. © 2007 The Electrochemical Society