Optical Spin Orientation in Strained Superlattices

Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spin-polarization spectra on the structure parameters is clarified. The value of polarization in the first polarization maximum in the SL structures is shown to grow with the splitting between the hh- and lh- states of the valence band, the joint strain and confinement effects on the hh1- lh1 splitting being strongly influenced by the tunneling in the barriers. In strained structures with high barriers for the holes initial polarization can exceed 95 %. Calculated polarization spectra are close to the experimental spectra of polarized electron emission.Comment: 20 pages, 8 figure

Weak localization of holes in high-mobility heterostructures

Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.Comment: 5 pages, 4 figure

Theorem about the number and structure of the singular points n-dimensional dynamical system of population dynamics Lotka-Volterra in context of informational analysis and modeling

By elementary methods of combinatorial mathematics and uniqueness of solutions systems of linear algebraic equations for non degenerate cases proved a theorem about the number and structure of the singular points of n-dimensional dynamical system of population a dynamics Lotka-Volterra model. Showed that the number of singular points for this system is equal to 2 and their structure on a combination of zero nand nonzero coordinates coincides with the binomial coefficientsyesBelgorod State Universit

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths

Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots

Electron spin coherence has been generated optically in n-type modulation doped (In,Ga)As/GaAs quantum dots (QDs) which contain on average a single electron per dot. The coherence arises from resonant excitation of the QDs by circularly-polarized laser pulses, creating a coherent superposition of an electron and a trion state. Time dependent Faraday rotation is used to probe the spin precession of the optically oriented electrons about a transverse magnetic field. Spin coherence generation can be controlled by pulse intensity, being most efficient for (2n+1)pi-pulses.Comment: 5 pages, 4 figure

Tetra­potassium dianti­mony(III) tin(IV) tetra­deca­fluoride

The title compound, K4Sb2SnF14, is built from anionic layers, with an overall composition of [Sb2SnF14]4− extending parallel to the ac plane, and K+ cations. The layers are made up from vertex-sharing centrosymmetric SnF6 octa­hedra and Sb2F12 dimers. The Sn—F distances are in the range 1.9581 (14)–1.9611 (17) Å. The Sb polyhedra contain three short terminal Sb—F bonds [1.9380 (14)–2.0696 (15) Å], one short bridging bond [2.0609 (17) Å], one bridging bond of medium length [2.7516 (15) Å], and two longer bridging bonds [3.0471 (18) and 3.117 (2) Å]. The K+ ions are coordinated by F atoms with coordination numbers 10 and 8, and K—F bond lengths are in the range 2.6235 (16)–3.122 (2) Å

Spin-orbit terms in multi-subband electron systems: A bridge between bulk and two-dimensional Hamiltonians

We analyze the spin-orbit terms in multi-subband quasi-two-dimensional electron systems, and how they descend from the bulk Hamiltonian of the conduction band. Measurements of spin-orbit terms in one subband alone are shown to give incomplete information on the spin-orbit Hamiltonian of the system. They should be complemented by measurements of inter-subband spin-orbit matrix elements. Tuning electron energy levels with a quantizing magnetic field is proposed as an experimental approach to this problem.Comment: Typos noticed in the published version have been corrected and several references added. Published in the special issue of Semiconductors in memory of V.I. Pere

The Nuclear Spin Nanomagnet

Linearly polarized light tuned slightly below the optical transition of the negatively charged exciton (trion) in a single quantum dot causes the spontaneous nuclear spin polarization (self-polarization) at a level close to 100%. The effective magnetic field of spin-polarized nuclei brings the optical transition energy into resonance with photon energy. The resonantly enhanced Overhauser effect sustains the stability of the nuclear self-polarization even in the absence of spin polarization of the quantum dot electron. As a result the optically selected single quantum dot represents a tiny magnet with the ferromagnetic ordering of nuclear spins - the nuclear spin nanomagnet.Comment: 19 pages, including 3 figures. Short version has been accepted for publication in Physical Review Letter

Stabilizing effect of nuclear quadrupole interaction on the polarization of electron-nuclear spin system in a quantum dot

Nuclear quadrupole interaction extends the limits imposed by hyperfine interaction on the spin coherence of the electron and nuclei in a quantum dot. The strain-induced nuclear quadrupole interaction suppresses the nuclear spin flip and makes possible the zero-field dynamic nuclear polarization in self-organized InP/InGaP quantum dots. The direction of the effective nuclear magnetic field is fixed in space, thus quenching the magnetic depolarization of the electron spin in the quantum dot. The quadrupole interaction suppresses the zero-field electron spin decoherence also for the case of non-polarized nuclei. These results provide a new vision of the role of the nuclear quadrupole interaction in nanostructures: it elongates the spin memory of the electron-nuclear system.Comment: 18 pages including 3 figures. Shortened version has been accepted for publication in Physical Review Letter

Intrinsic electric polarization in spin-orbit coupled semiconductor heterostructures

We present Maxwell equations with source terms for the electromagnetic field interacting with a moving electron in a spin-orbit coupled semiconductor heterostructure. We start with the eight--band ${\bm k}{\bm p}$ model and derive the electric and magnetic polarization vectors using the Gordon--like decomposition method. Next, we present the ${\bm k}{\bm p}$ effective Lagrangian for the nonparabolic conduction band electrons interacting with electromagnetic field in semiconductor heterostructures with abrupt interfaces. This Lagrangian gives rise to the Maxwell equations with source terms and boundary conditions at heterointerfaces as well as equations for the electron envelope wave function in the external electromagnetic field together with appropriate boundary conditions. As an example, we consider spin--orbit effects caused by the structure inversion asymmetry for the conduction electron states. We compute the intrinsic contribution to the electric polarization of the steady state electron gas in asymmetric quantum well in equilibrium and in the spin Hall regime. We argue that this contribution, as well as the intrinsic spin Hall current, are not cancelled by the elastic scattering processes.Comment: 12 pages, 3 figure