Acoustic Response to the Action of Nanosecond Laser Pulses on an In/CdTe Thin-Film Heterostructure

The photothermoacoustic method has been used for diagnostics of thermobarodynamic processes in the metal In(400 nm)/semiconductor (CdTe) thin-film system under nanosecond laser irradiation (7 ns, λ = 532 nm) in natural conditions (in air) and in a liquid medium (water). From the analysis of the data obtained, the dependence of the pressure induced in the energy-release region on the irradiation energy den-sity has been established and the melting threshold of In film has been determined. Under irradiation of In/CdTe in water, the pressure is higher than in air: 17 times higher at the melting threshold of In film and 30 times higher at twice the temperature. It has been found that the laser pulse treatment of In/CdTe/Au samples in water makes it possible to obtain diode structures with better parameters: smaller leak currents and a steeper current-voltage characteristic under the forward bias of the p-n junction

Phase transitions in erbium-doped silicon exposed to laser radiation

The dynamics of phase transitions induced by nanopulsed ruby laser radiation (80 nsec, 2 J/cm2 ) both in silicon layers doped with erbium ions and in those containing doped erbium and oxygen have been studied by an optical probing method. It is shown that the reflectivity behavior of structures under pulsed irradiation is governed by phase transitions (melting and rystallization) of implanted silicon and also by interference effects at the interfaces of the resulting phases. It is established that the profiles of erbium distribution change under nanosecond laser irradiation and that the dopant is forced out to the surface due to a segregation effect at small implantation doses. As the implanatation dose increases, diffusion deep into the sample tends to prevail over segregation. A considerable increase in the photoluminescence peak intensity at 0.81 eV is found after both the pulsed laser processing and thermal post-annealing of doped samples as opposed to spectra of samples subjected either to thermal annealing or to pulsed laser irradiation

Acoustic Response to the Action of Nanosecond Laser Pulses on an In/CdTe Thin-Film Heterostructure

The photothermoacoustic method has been used for diagnostics of thermobarodynamic processes in the metal In(400 nm)/semiconductor (CdTe) thin-film system under nanosecond laser irradiation (7 ns, λ = 532 nm) in natural conditions (in air) and in a liquid medium (water). From the analysis of the data obtained, the dependence of the pressure induced in the energy-release region on the irradiation energy den-sity has been established and the melting threshold of In film has been determined. Under irradiation of In/CdTe in water, the pressure is higher than in air: 17 times higher at the melting threshold of In film and 30 times higher at twice the temperature. It has been found that the laser pulse treatment of In/CdTe/Au samples in water makes it possible to obtain diode structures with better parameters: smaller leak currents and a steeper current–voltage characteristic under the forward bias of the p–n junctio