Drag Force, Jet Quenching, and AdS/QCD

In this note, two important transport observables in the RHIC experiment, relaxation time constant and jet quenching parameter, are calculated from an AdS/QCD model. A quark moving in the viscous medium such as the Quark-Gluon-Plasma is modelled by an open string whose end point travels on the boundary of a deformed AdS_5 black hole. The correction introduced via the deformed AdS_5 is believed to help us better understand the data which is expected to be measured in the RHIC.Comment: 13 pages, 4 figures, revised for PRD. Some comments have been added below Eq.(34) to avoid a misreading in comparison between our result and CFT'

Theory of magnon-driven spin Seebeck effect

The spin Seebeck effect is a spin-motive force generated by a temperature gradient in a ferromagnet that can be detected via normal metal contacts through the inverse spin Hall effect [K. Uchida {\it et al.}, Nature {\bf 455}, 778-781 (2008)]. We explain this effect by spin pumping at the contact that is proportional to the spin-mixing conductance of the interface, the inverse of a temperature-dependent magnetic coherence volume, and the difference between the magnon temperature in the ferromagnet and the electron temperature in the normal metal [D. J. Sanders and D. Walton, Phys. Rev. B {\bf 15}, 1489 (1977)].Comment: 10 pages, 3 figures, 2 tables. This version is NOT the published PRB but a version with an erratu

Theory of spin Hall magnetoresistance

We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is induced by the simultaneous action of spin Hall and inverse spin Hall effects and therefore a non-equilibrium proximity phenomenon. We compute the SMR in F$|$N and F$|$N$|$F layered systems, treating N by spin-diffusion theory with quantum mechanical boundary conditions at the interfaces in terms of the spin-mixing conductance. Our results explain the experimentally observed spin Hall magnetoresistance in N$|$F bilayers. For F$|$N$|$F spin valves we predict an enhanced SMR amplitude when magnetizations are collinear. The SMR and the spin-transfer torques in these trilayers can be controlled by the magnetic configuration

Continuous Generation of Spinmotive Force in a Patterned Ferromagnetic Film

We study, both experimentally and theoretically, the generation of a dc spinmotive force. By exciting a ferromagnetic resonance of a comb-shaped ferromagnetic thin film, a continuous spinmotive force is generated. Experimental results are well reproduced by theoretical calculations, offering a quantitative and microscopic understanding of this spinmotive force.Comment: 4 pages, 4 figures, accepted to Physical Review Letter

QCD Viscosity to Entropy Density Ratio in the Hadronic Phase

Shear viscosity (eta) of QCD in the hadronic phase is computed by the coupled Boltzmann equations of pions and nucleons in low temperatures and low baryon number densities. The eta to entropy density ratio eta/s maps out the nuclear gas-liquid phase transition by forming a valley tracing the phase transition line in the temperature-chemical potential plane. When the phase transition turns into a crossover, the eta/s valley gradually disappears. We suspect the general feature for a first-order phase transition is that eta/s has a discontinuity in the bottom of the eta/s valley. The discontinuity coincides with the phase transition line and ends at the critical point. Beyond the critical point, a smooth eta/s valley is seen. However, the valley could disappear further away from the critical point. The eta/s measurements might provide an alternative to identify the critical points.Comment: 16 pages, 4 figures. Minor typos corrected and references adde

Supersymmetry, homology with twisted coefficients and n-dimensional knots

Let $n$ be any natural number. Let $K$ be any $n$-dimensional knot in $S^{n+2}$. We define a supersymmetric quantum system for $K$ with the following properties. We firstly construct a set of functional spaces (spaces of fermionic \{resp. bosonic\} states) and a set of operators (supersymmetric infinitesimal transformations) in an explicit way. Thus we obtain a set of the Witten indexes for $K$. Our Witten indexes are topological invariants for $n$-dimensional knots. Our Witten indexes are not zero in general. If $K$ is equivalent to the trivial knot, all of our Witten indexes are zero. Our Witten indexes restrict the Alexander polynomials of $n$-knots. If one of our Witten indexes for an $n$-knot $K$ is nonzero, then one of the Alexander polynomials of $K$ is nontrivial. Our Witten indexes are connected with homology with twisted coefficients. Roughly speaking, our Witten indexes have path integral representation by using a usual manner of supersymmetric theory.Comment: 10pages, no figure

A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)

Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using WIEN2k and a narrow indirect band gap of width 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard X-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi

Bipolar-Driven Large Magnetoresistance in Silicon

Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in non-magnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.Comment: 23 pages, 4 figures (main text), 6 figures (supplemental material