Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene

The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap $\Delta$ induced by the application of a perpendicular electric field. We calculate the crossover chemical potential, $\Delta_{\rm cr}$, separating the insulating regime from a percolative regime in which less than half of the area of the bilayer graphene sample is insulating. We find that most of the current experiments are in the percolative regime with $\Delta_{\rm cr}<<\Delta$. The huge suppression of $\Delta_{\rm cr}$ compared with $\Delta$ provides a possible explanation for the large difference between the theoretical band gap $\Delta$ and the experimentally extracted transport gap.Comment: 5 Pages, 2 figures. Published versio

Theory of carrier transport in bilayer graphene

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin, establishing that both scattering mechanisms contribute significantly to determining bilayer transport properties. We find that although strong screening properties of bilayer graphene lead to qualitative differences with the corresponding single layer situation, both systems exhibit the linearly density dependent conductivity at high density and the minimum graphene conductivity behavior around the charge neutrality point due to the formation of inhomogeneous electron-hole puddles induced by the random charged impurity centers.Comment: 5 pages, 4 figure

Soft gluon multiplicity distribution revisited

In this paper the soft gluon radiation from partonic interaction of the type: $2 \to 2$ + gluon has been revisited and a correction term to the widely used Gunion-Bertsch (GB) formula is obtained.Comment: Few typos corrected, to appear in Phys. Rev. D (rapid communication

Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect

We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative magnetoresistance $\sigma \propto B^2$ for intrinsic graphene, but for extrinsic graphene we find a non-monotonic magnetoresistance which is positive at lower magnetic fields (below the full spin-polarization) and negative at very high fields (above the full spin-polarization). The conductivity of the minority spin band $(-)$ electrons does not vanish as the minority carrier density ($n_-$) goes to zero. The residual conductivity of $(-)$ electrons at $n_- = 0$ is unique to graphene. We discuss experimental implications of our theory.Comment: 5 pages, 3 figure