ROC-ANALYSIS OF NEUROIMMUNOLOGIC INDICES IN PATIENTS WITH CHRONIC PSYCHOGENIC URTICARIA

Psychological stress connects with increased level of substance P, wherewith there may be interconnection between psychosomatic component and neuroimmunologic one in the chronic urticaria. Modern methods of findings statistical manipulation have been used in this work. Neuroimmunologic criteria of psychogenic urticaria were defined by the use of ROC-analysis. Substance P role in the pathogenesis of the disease have been indicated, correlation between substance P level and angiotensin converting enzyme (ACE) activity have been corroborated. Assessment of anxiety disorders level have been carried out

Peculiarities in produced particles emission in 208Pb + Ag(Br) interactions at 158 A GeV/c

The angular structures of particles produced in 208Pb induced collisions with Ag(Br) nuclei in an emulsion detector at 158 A GeV/c have been investigated. Nonstatistical ring-like substructures in azimuthal plane of the collision have been found and their parameters have been determined. The indication on the formation of the ring-like substructures from two symmetrical emission cones - one in the forward and other in the backward direction in the center-of mass system have been obtained. The ring-like substructures parameters have been determined. The experimental results are in an agreement with I.M. Dremin idea, that mechanism of the ring-like substructures formation in nuclear collisions is similar to that of Cherenkov electromagnetic radiation.Comment: 10 pages, 7 figures, Report at the HADRON STRUCTURE'04 Conference, Smolenice, Slovakia, 30.8.-3.9.200

Genetic determinants of complicated pregnancy

The connections of polymorphic variants of the gene of vasoactive hormones with the level of arterial pressure in pregnant women, depending on the development of preeclampsia (PE), have been studie

Switching ferroelectricity in SnSe across diffusionless martensitic phase transition

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ diffusionless martensitic phase transition in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched $\beta$-$Cmcm$ low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ phase transition. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics

Gate-dependent non-linear Hall effect at room temperature in topological semimetal GeTe

We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$ substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gate field screening by bulk carriers. In contrast, by transverse voltage measurements, we demonstrate that the non-linear Hall effect shows pronounced dependence on the gate electric field at room temperature. Since the non-linear Hall effect is a direct consequence of a Berry curvature dipole in topological media, our observations indicate that Berry curvature can be controlled by the gate electric field. This experimental observation can be understood as a result of the known dependence of giant Rashba splitting on the external electric field in GeTe. For possible applications, the zero-frequency gate-controlled non-linear Hall effect can be used for the efficient broad-band rectification

Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe2_2

The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe$_2$ is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor is polarized in-plane, so one should expect complicated polarization structure at the SnSe/WTe$_2$ interface. We study $dI/dV(V)$ curves, which demonstrate sharp symmetric drop to zero $dI/dV$ differential conductance at some threshold bias voltages $\pm V_{th}$, which are nearly symmetric in respect to the bias sign. While the gate electric field is too small to noticeably affect the carrier concentration, the positive and negative threshold positions are sensitive to the gate voltage. Also, SnSe/WTe$_2$ heterostructure shows re-entrant transition to the low-conductive $dI/dV=0$ state for abrupt change of the bias voltage even below the threshold values. This behavior can not be observed for single SnSe or WTe$_2$ flakes, so we interpret it as a result of the SnSe/WTe$_2$ interface coupling. In this case, some threshold value of the electric field at the SnSe/WTe$_2$ interface is enough to drive 90$^\circ$ change of the initial SnSe in-plane polarization in the overlap region. The polarization mismatch leads to the significant interface resistance contribution, analogously to the scattering of the charge carriers on the domain walls. Thus, we demonstrate polarization state control by electron transport through the SnSe/WTe$_2$ interface

Assessment of capitalization as a management tool of economic development of a region

The article suggests the authors' definition of capitalization of regional economy as a process of effective business usage, increase of revenues and values of complex capital assets of regional economic agents. The functions of capitalization are systematized and peculiarities of their implementation at the regional level are revealed. The authors define and structure the objects of capitalization of regional economyyesBelgorod State Universit

Composite Ceramics Based on Garnet-type Oxide Y2.5Nd0.5Al5O12 and Silicon Carbide. Preparation. Properties

We have obtained powders of garnet-type complex oxide Y2.5Nd0.5Al5O12 – x vol.% SiC (x = 0, 10, 20) using wet chemistry techniques. The ceramics based on the studying compounds were sintered using Spark Plasma Sintering (SPS) (