THE COMPETITIVENESS OF WESTERN CAPE WHEAT PRODUCTION: AN INTERNATIONAL COMPARISON

This paper reports the results of an international comparison of the cost of producing wheat in 8 Western Cape, 3 Free State and 7 foreign producing areas. Results show that South African yields are low compared to foreign countries whose production costs are as high as or higher than those in South Africa, while the net margins for South African producers are less than a third of those for countries that have the same or lower yields as South Africa. If the wheat industry in the Western Cape is to survive international competition, it will have to create its international competitiveness.Crop Production/Industries, International Relations/Trade,

X-ray polarimetry with an active-matrix pixel proportional counter

We report the first results from an X-ray polarimeter with a micropattern gas proportional counter using an amorphous silicon active matrix readout. With 100% polarized X-rays at 4.5 keV, we obtain a modulation factor of 0.33 +/- 0.03, confirming previous reports of the high polarization sensitivity of a finely segmented pixel proportional counter. The detector described here has a geometry suitable for the focal plane of an astronomical X-ray telescope. Amorphous silicon readout technology will enable additional extensions and improvements.Comment: 4 pages, 4 figures, 1 tabl

Investigation of relationships between linears, tonal and hazy anomalies, and petroleum production in the Williston Basin: An ERTS approach

There are no author-identified significant results in this report

Oxygen-related traps in pentacene thin films: Energetic position and implications for transistor performance

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the samples to ambient air. Photooxidation of pentacene is shown to lead to a peak of trap states centered at 0.28 eV from the mobility edge, with trap densities of the order of 10(18) cm(-3). These trap states need to be occupied at first and cause a reduction in the number of free carriers, i.e. a consistent shift of the density of free holes as a function of gate voltage. Moreover, the exposure to oxygen reduces the mobility of the charge carriers above the mobility edge. We correlate the change of these transport parameters with the change of the essential device parameters, i.e. subthreshold performance and effective field-effect mobility. This study supports the assumption of a mobility edge for charge transport, and contributes to a detailed understanding of an important degradation mechanism of organic field-effect transistors. Deep traps in an organic field-effect transistor reduce the effective field-effect mobility by reducing the number of free carriers and their mobility above the mobility edge.Comment: 13 pages, 14 figures, to be published in Phys. Rev.