Repeated disinfectant use in broiler houses and pig nursery units does not affect disinfectant and antibiotic susceptibility in Escherichia coli field isolates

Background Disinfectants are frequently used in animal production to reduce or eliminate the load of infectious agents and parasites in buildings and equipment associated with the housing or transportation of animals. There are growing concerns that the use of disinfectants would select for resistance to antibiotics and disinfectants. The aim of this study was to determine the effect of repeated use of different disinfectants on the disinfectant and antibiotic susceptibility under practical conditions in a broiler and pig pilot farm. Therefore, the susceptibility of Escherichia coli (E. coli) to 14 antibiotics and 4 disinfectants was monitored over a one-year period. Results High (20-50%) to very high (> 50%) resistance levels for ampicillin, sulfamethoxazole, trimethoprim and tetracycline were observed in both animal production types. Disinfectant susceptibility did not change over time and did not depend on the used disinfection product. Compared to in-use concentrations of formaldehyde, benzalkoniumchloride and a peracetic acid - hydrogen peroxide formulation, all E. coli strains remained susceptible indicating that the use of disinfectants did not select for disinfectant resistance. Moreover, no association could be found between the use of disinfectants and antibiotic resistance. Conclusions These findings suggest that repeated use of disinfectants in agricultural environments does not select for antibiotic resistance nor does it reduce disinfectant susceptibility

Circulating Cell-Free DNA in Dogs with Mammary Tumors: Short and Long Fragments and Integrity Index

Circulating cell-free DNA (cfDNA) has been considered an interesting diagnostic/prognostic plasma biomarker in tumor-bearing subjects. In cancer patients, cfDNA can hypothetically derive from tumor necrosis/apoptosis, lysed circulating cells, and some yet unrevealed mechanisms of active release. This study aimed to preliminarily analyze cfDNA in dogs with canine mammary tumors (CMTs). Forty-four neoplastic, 17 non-neoplastic disease-bearing, and 15 healthy dogs were recruited. Necrosis and apoptosis were also assessed as potential source of cfDNA on 78 CMTs diagnosed from the 44 dogs. The cfDNA fragments and integrity index significantly differentiated neoplastic versus non-neoplastic dogs (P<0.05), and allowed the distinction between benign and malignant lesions (P<0.05). Even if without statistical significance, the amount of cfDNA was also affected by tumor necrosis and correlated with tumor size and apoptotic markers expression. A significant (P<0.01) increase of Bcl-2 in malignant tumors was observed, and in metastatic CMTs the evasion of apoptosis was also suggested. This study, therefore, provides evidence that cfDNA could be a diagnostic marker in dogs carrying mammary nodules suggesting that its potential application in early diagnostic procedures should be further investigated

Plasma-Enhanced Chemical Vapour Deposition of Amorphous Se Films

The preparation of layers of amorphous Se by plasma-enhanced CVD using the hydride H2Se as precursor gas is described. Using a mixture of 15 vol.% H2Se in H2, partly crystallized films were obtained. Information concerning the structure of the films was obtained from Raman spectroscopy. The spectra of amorphous Se indicated that the dominant molecular structure is the eight-membered ring and/or a chain with Se8 molecular fragments. The optical transmission spectrum was recorded at different temperatures in the range 77-300 K. The optical bandgap ET was calculated from the optical absorption coefficients α using Tauc law : αν=C(hν-Er)2, where hν is the photon energy. The temperature dependence of ET can be approximated by a linear relation : [MATH]

Plasma-enhanced C.V.D. of amorphous GexS1-x, and GexSe1-x films

We describe plasma-enhanced chemical vapour deposition for decomposing a mixture of two gaseous hydrides, GeH4 and H2S or H2Se, to yield layers of amorphous GexS1-x and GexSe1-x. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and homogeneity of the films. For Ge-Se samples, the composition varied between Ge-rich (typically Ge0.66Se0.34) and Se-rich deposits (maximum Ge0.23Se0.77). The incorporation of sulfur was less effective : maximum 57 at.% S in Ge-S layers (GeH4/H2S = 1/96 and p = 0.1 mbar) i.e. less than the stoichiometric composition GeS2. Information concerning the structure of as-deposited Ge-S and Ge-Se layers was obtained from infrared and Raman spectroscopy. Ge-rich films of both Ge-S and Ge-Se were unstable in air and showed in their IR spectra broad absorption bands of Ge-O vibrations, increasing in intensity when keeping them in air for a long time

Optimization of low temperature Silicon Nitride processes for improvement of device performance

Abstract This paper gives some insights in the applications where PECVD nitrides can be introduced to replace the LPCVD layers and how the process parameters need to be varied to obtain the desired properties. Film properties like stress, hydrogen content, wet etch rate and deposition rate are reported. The nitrides are optimized for specific applications and examples on the influence of nitride properties on device performance are given. It is important to investigate that the advantage of the high film integrity of nitride layers used in the past is not lost due to the strong demand for developing new process schemes with low thermal budget layers. We show that PECVD films are a valid alternative for LPCVD and that the majority of the film properties satisfy the criteria to use PECVD films as contact-etch-stop layers, silicidation blocking films and spacer materials

Effect of dopants on the dissolution behavior of silicon substrates in HF-based cleaning solutions

In this work, the effect of dopants on the dissolution behavior of silicon substrates in HF-based cleaning solutions has been characterized. Quantitative spectroscopic ellipsometric measurements and chemical analysis of the leached Si by spectrophotometry were used to determine the Si substrate loss as a function of cleaning time.Anglai