12,104 research outputs found
Death of a 78-Year Old Woman
This official opinion of the District Attorney of Milwaukee County, E. Michael McCann, represents a synthesis of sound jurisprudence and sound medical-ethical reasoning in a difficult medical situation
Screening in gated bilayer graphene via variational calculus
We analyze the response of bilayer graphene to an external transverse
electric field using a variational method. A previous attempt to do so in a
recent paper by Falkovsky [Phys. Rev. B 80, 113413 (2009)] is shown to be
flawed. Our calculation reaffirms the original results obtained by one of us
[E. McCann, Phys. Rev. B 74, 161403(R) (2006)] by a different method. Finally,
we generalize these original results to describe a dual-gated bilayer graphene
device.Comment: 4 pages, 1 figur
Radiation environment and shielding for early manned Mars missions
The problem of shielding a crew during early manned Mars missions is discussed. Requirements for shielding are presented in the context of current astronaut exposure limits, natural ionizing radiation sources, and shielding inherent in a particular Mars vehicle configuration. An estimated range for shielding weight is presented based on the worst solar flare dose, mission duration, and inherent vehicle shielding
Forward velocity effects on fan noise and the influence of inlet aeroacoustic design as measured in the NASA Ames 40 x 80 foot wind tunnel
The inlet radiated noise of a turbofan engine was studied. The principal research objectives were to characterize or suppress such noise with particular regard to its tonal characteristics. The major portion of this research was conducted by using ground-based static testing without simulation of aircraft forward speed or aircraft installation-related aeroacoustic effects
Are Courts Taking Internet Threats Seriously Enough? An Analysis of True Threats Transmitted over the Internet, as Interpreted in United States v. Carmichael
Gate-tunable bandgap in bilayer graphene
The tight-binding model of bilayer graphene is used to find the gap between
the conduction and valence bands, as a function of both the gate voltage and as
the doping by donors or acceptors. The total Hartree energy is minimized and
the equation for the gap is obtained. This equation for the ratio of the gap to
the chemical potential is determined only by the screening constant. Thus the
gap is strictly proportional to the gate voltage or the carrier concentration
in the absence of donors or acceptors. In the opposite case, where the donors
or acceptors are present, the gap demonstrates the asymmetrical behavior on the
electron and hole sides of the gate bias. A comparison with experimental data
obtained by Kuzmenko et al demonstrates the good agreement.Comment: 6 pages, 5 figure
The influence of interlayer asymmetry on the magnetospectroscopy of bilayer graphene.
We present a self-consistent calculation of the interlayer asymmetry in bilayer graphene caused by an applied electric field in magnetic fields. We show how this asymmetry influences the Landau level spectrum in bilayer graphene and the observable inter-Landau level transitions when they are studied as a function of high magnetic field at fixed filling factor as measured experimentally in Ref. [1]. We also analyze the magneto-optical spectra of bilayer flakes in the photon-energy range corresponding to transitions between degenerate and split bands of bilayers
Tunable graphene system with two decoupled monolayers
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nanometer scale separation between them
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